MCR3835-10 반도체 회로 부품 판매점
SILICON CONTROLLED RECTIFIERS
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 Digitron Semiconductors |
MCR3835 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
MCR3835-1
MCR3835-2
MCR3835-3
MCR3835-4
MCR3835-5
MCR3835-6
MCR3835-7
MCR3835-8
MCR3835-9
MCR3835-10
VRRM, VDRM
25
50
100
200
300
400
500
600
700
800
Volts
Peak non-repetitive blocking voltage(1)
MCR3835-1
MCR3835-2
MCR3835-3
MCR3835-4
MCR3835-5
MCR3835-6
MCR3835-7
MCR3835-8
MCR3835-9
MCR3835-10
VRRM, VDRM
25
50
100
200
300
400
500
600
700
800
Volts
Forward on-state current RMS (all conduction angles)
IT(RMS)
35
Amps
Peak surge current
(one cycle, 60Hz, TJ = -40 to +125°C)
ITSM 35 Amps
Circuit fusing considerations
(TJ = -40 to +100°C, t ≤ 8.3ms)
I2t 510 A2s
Peak gate power
Average gate power
PGM
PG(AV)
5 Watts
0.5 Watts
Peak forward gate current
IGM 2 Amps
Peak gate voltage, forward or reverse
VGM 10 Volts
Operating junction temperature range
TJ -40 to +125 °C
Storage temperature range
Tstg -40 to +150 °C
Mounting torque
30 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Maximum
1.2
Unit
°C/W
Rev. 20130118
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TJ = 25°)
Characteristic
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 100°C
Forward “on” voltage
(ITM = 35A peak)
Gate trigger current (continuous dc)
(VD = 7V, RL = 100Ω)
Gate trigger voltage (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = rated VDRM, RL = 100Ω, TJ = 100°C)
Holding current
(VD = 7Vdc, gate open)
Turn-on time (td + tr)
(ITM = 35A, IGT = 40mAdc)
Turn-off time
(ITM = 10A, IR = 10A)
(ITM = 10A, IR = 10A, TJ = 100°C)
Forward voltage application rate
(VD = rated VDRM, TJ = 100°C)
MECHANICAL CHARACTERISTICS
Case:
Digi PF2
Marking:
Alpha-numeric
MCR3835 SERIES
SILICON CONTROLLED RECTIFIERS
Symbol
Min.
Typ.
Max.
Unit
IDRM, IRRM
-
-
- 10 µA
1 5 mA
VTM - 1.2 1.5 Volts
IGT mA
- 10 40
Volts
VGT - 0.7 1.5
VGD 0.2
-
-
IH mA
- 10 50
Ton µs
-1-
tq µs
- 20 -
- 30 -
V/µs
dv/dt
-
50
-
Rev. 20130118
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제조업체: Digitron Semiconductors
( digitrons )
MCR3835-10 rectifier
데이터시트 다운로드 :
[ MCR3835-10.PDF ]
[ MCR3835-10 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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