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MBR3100 반도체 회로 부품 판매점

Schottky Barrier Rectifier ( Diode )



Kexin 로고
Kexin
MBR3100 데이터시트, 핀배열, 회로
DIP Type
Schottky Barrier Rectifier
MBR320 ~ MBR3100
TransDisiotodress
Ƶ Features
ƽ Metal silicon junction, majority carrier conduction
ƽ Low power loss, high efficiency
ƽ High forward surge current capability
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Ƶ Absolute Maximum Ratings and Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
Parameter
Symbol
MBR
320
MBR
330
MBR
340
MBR
350
MBR
360
MBR
370
MBR
380
MBR
390
MBR
3100
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
20 30 40 50 60 70 80 90 100
14 21 28 35 42 49 56 63 70
20 30 40 50 60 70 80 90 100
V
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
I(AV)
IFSM
3.0
80.0
A
Maximum instantaneous forward voltage at 3.0A VF
0.55
0.70
0.85 V
Maximum DC reverse current
at rated DC blocking voltage
TA=25ć
TA=100ć
IR
20
0.5
10
mA
Typical junction capacitance (Note 1)
Cj 250
160
Typical thermal resistance (Note 2)
RthJA
40
Junction Temperature
Tj -65 to +125
-65 to +150
Storage Temperature
Tstg -65 to +150
Notes:
1. Measured at 1MHz and applied reverse voltage of 4V D.C
2. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
pF
ć/W
ć
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MBR3100 데이터시트, 핀배열, 회로
DIP Type
Schottky Barrier Rectifier
MBR320 ~ MBR3100
TransDisiotodress
Ƶ Typical Characterisitics
FIG. 1- FORWARD CURRENT DERATING CURVE
3
2.4
1.8
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
1.2
0.6 MBR320-MBR340
MBR350-MBR3100
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
1
0.1
0.01
0.2
0.4
TJ=25 C
PULSE WIDTH=300 ms
1%DUTY CYCLE
MBR320-MBR340
MBR350-MBR360
MBR370-MBR3100
0.6 0.8
1.0 1.1
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
80
64
48
32
16 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100 TJ=100 C
10
TJ=75 C
1
0.1 TJ=25 C
0.01 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
2000
1000
MBR320-MBR340
MBR350-MBR3100
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
100
TJ=25 C
10
0.1
1.0 10
REVERSE VOLTAGE,VOLTS
100
1
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
100
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