1N5190 반도체 회로 부품 판매점
FAST RECOVERY GLASS RECTIFIERS
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 Microsemi |
1N5186 thru 1N5188, 1N5190
Available on
commercial
versions
VOIDLESS-HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/424
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated
rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with
voidless-glass construction using an internal “Category 1” metallurgical bond. Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both through-hole
and surface mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5186 thru 1N5190 series.
• Voidless hermetically sealed glass package.
• Working Peak Reverse Voltage 100 to 600 volts.
• Internal “Category I ” metallurgical bond.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/424.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Fast recovery 3 amp 100 to 600 volt rectifiers.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Extremely robust construction.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead (1)
Forward Surge Current @ 8.3 ms half-sine, TA = +150 oC
Working Peak Reverse Voltage
1N5186
1N5187
1N5188
Average Rectified Forward Current
Maximum Reverse Recovery Time
1N5190
@ TA = +25 oC
@ TA = +150 oC
1N5186
1N5187
1N5188
1N5190
Solder Temperature @ 10 s
Symbol
TJ and TSTG
R ӨJL
IFSM
V RWM
IO
t rr
TSP
Notes: 1. At 3/8 inch (10 mm) lead length from body.
Value
-65 to +175
20
80
100
200
400
600
3.0
0.700
150
200
250
400
260
Unit
oC
oC/W
A
V
A
ns
oC
Qualified Levels:
JAN, JANTX
and JANTXV
“B” Package
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0216, Rev. 1 (111512)
©2011 Microsemi Corporation
Page 1 of 3
1N5186 thru 1N5188, 1N5190
MECHANICAL and PACKAGING
• CASE: Hermetically sealed voidless hard glass with tungsten slugs.
• TERMINALS: Tin/lead (Sn/Pb) over nickel (Ni) coat or RoHS compliant matte-tin (commercial grade only) over copper.
• MARKING: Body is coated and marked with part number.
• POLARITY: Cathode band.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: 797 milligrams.
• See Package Dimensions on last page.
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
PART NOMENCLATURE
JAN 1N5186 e3
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
See Electrical Characteristics
table
Symbol
V (BR)
V RWM
VF
IR
t rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
TYPE
1N5186
1N5187
1N5188
1N5190
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAKDOWN
VOLT AGE
FORWARD
VOLT AGE
MAXIMUM
REVERSE
CURRENT
V (BR) @ 100 µA
Volts
120
240
480
660
V F @ 9 A (pulsed)
MIN MAX
Volts
Volts
0.9 1.5
0.9 1.5
0.9 1.5
0.9 1.5
IR @ V RWM
25 oC
100 oC
µA µA
2.0 100
2.0 100
2.0 100
2.0 100
T4-LDS-0216, Rev. 1 (111512)
©2011 Microsemi Corporation
Page 2 of 3
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1N5190 rectifier
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국내 전력반도체 판매점
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