SDR1THF 반도체 회로 부품 판매점
HYPER FAST RECTIFIER
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 SSDI |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR1 __ __ __ __
│ │ │ └ Screening 2/
│ ││
__ = Not Screened
│ ││
TX = TX Level
│ ││
TXV = TXV
│ ││
S = S Level
│ ││
│ │ └ Package Type
│ │ __ = Axial Leaded
│ │ SMS = Surface Mount Square Tab
│
│
│
└ Reverse Recovery
HF = Hyper Fast
└ Family/Voltage P = 1300 V T = 1600 V
R = 1400 V V = 1700 V
S = 1500 V W = 1800 V
SDR1PHF thru SDR1WHF
and
SDR1PHFSMS and SDR1WHFSMS
1 AMP
HYPER FAST RECTIFIER
1300 ─ 1800 VOLTS
40 nsec
FEATURES:
• Hyper Fast Recovery: 40 ns Max @ 25°C 4/
• Single Chip Construction
• PIV to 1800 Volts
• Low Reverse Leakage Current
• Hermetically Sealed
• For High Efficiency Applications
• Available in Axial and Surface Mount
Versions
• Metallurgically Bonded
• TX, TXV, and S-Level Screening Available2/
MAXIMUM RATINGS 3/
RATING
Peak Repetitive Reverse Voltage And
DC Blocking Voltage
SDR1PHF
SDR1RHF
SDR1SHF
SDR1THF
SDR1VHF
SDR1WHF
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, TL = 25°C, L = 1/8”)
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25°C)
Operating & Storage Temperature
Thermal Resistance, Junction to Lead, L = 3/8” (Axial)
Junction to End Tab (SMS)
SYMBOL
VRRM
VRWM
VR
IO
IFSM
TOP and TSTG
RθJL
RθJE
VALUE
1300
1400
1500
1600
1700
1800
1.0
12
-65 to +175
35
28
UNIT
Volts
Amp
Amps
°C
°C/W
NOTES:
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on
Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
5/ For information on operating curves, contact factory.
Axial Lead
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0129A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS 3/
CHARACTERISTICS
Instantaneous Forward Voltage Drop
(IF = 1 Adc, 300- 500 μs Pulse, TA = 25°C)
Instantaneous Forward Voltage Drop
(IF = 1 Adc, 300- 500 μs Pulse, TA = -55°C)
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 25°C)
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 100°C)
Junction Capacitance
(VR = 100Vdc, TA = 25°C , f = 1MHz)
Maximum Reverse Recovery Time 4/
SDR1PHF thru SDR1WHF
and
SDR1PHFSMS and SDR1WHFSMS
SYMBOL VALUE
VF1 4.80
UNIT
Vdc
VF2 5.0 Vdc
IR1 20 μA
IR2 200 μA
CJ 20 pf
trr 40 ns
Axial Leaded Case Outline:
DIMENSIONS
DIM. MIN. MAX.
A .100” .150”
B .125” .200”
C .027” .033”
D 1.00” ---
Square Tab Surface Mount Case
Outline:
DIMENSIONS
DIM. MIN. MAX.
A .135” .155”
B .175” .250”
C .022” .028”
D .002” ---
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0129A
DOC
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( ssdi )
SDR1THF rectifier
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