121NQ040-1 반도체 회로 부품 판매점
Schottky Rectifier ( Diode )
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 SANGDEST MICROELECTRONICS |
SANGDEST
MICROELECTRONICS
121NQ.../R-1 SERIES
Technical Data
Green Products
Data Sheet N1158, Rev. -
121NQ035/R-1 121NQ040/R-1 121NQ045/R-1
SCHOTTKY RECTIFIER
Applications:
● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection
Features:
• 175℃ TJ operation
• Unique high power, Half-Pak module
• Replaces three parallel DO-5’S
• Easier to mount and lower profile than DO-5’S
• High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot
• Additional testing can be offered upon request
121NQ035-1 121NQ035R-1
Mechanical Dimensions: In Inches / mm
PRM1-1(HALF PAK Module)
MARKING,MOLDING RESIN
Marking for 121NQ035/R-1, 1st row SS YYWWL, 2nd row 121NQ035-1/121NQ035R-1
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
121NQ.../R-1 SERIES
Technical Data
Data Sheet N1158, Rev. -
Green Products
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Non-Repetitive
Energy
Avalanche
Repetitive Avalanche Current
Electrical Characteristics:
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
Condition
-
50% duty cycle @TC =133°C,
rectangular wave form
35
40
45
8.3 ms, half Sine pulse
TJ=25℃,IAS=12A,L=1.12mH
Current decaying linearly to
zero in 1 μsec Frequency
limited by TJ max. VA=1.5×
VR typical
Max.
121NQ035(R)-1
121NQ040(R)-1
121NQ045(R)-1
120
2640
81
12
Units
V
A
A
mJ
A
Characteristics
Max. Forward Voltage Drop*
Symbol
VF1
VF2
Max. Reverse Current (per
leg) *
Threshold Voltage
Forward Slope Resistance
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
z Pulse Width < 300µs, Duty Cycle <2%
IR1
IR2
VF(TO)
rt
CT
LS
dv/dt
Thermal-Mechanical Specifications:
Condition
@ 120A, Pulse, TJ = 25 °C
@ 240A, Pulse, TJ = 25 °C
@ 120A, Pulse, TJ = 125 °C
@ 240A, Pulse, TJ = 125 °C
@VR = rated VR TJ = 25 °C
@VR = rated VR TJ = 125 °C
TJ = TJmax
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
-
Max.
0.65
0.83
0.56
0.70
10
90
0.32
1.37
5200
7.0
10,000
Units
V
V
mA
mA
V
mΩ
pF
nH
V/μs
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Typical Thermal Resistance,
case to Heat Sink
Mounting Torque
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
Rθcs
TM
wt
Condition
-
-
DC operation
Mounting surface, smooth
and greased
Non-lubricated threads
-
PRM1-1
Specification
-55 to +175
-55 to +175
0.40
0.15
Mounting 23(min)
Torque 29(max)
Terminal 35(min)
Torque 46(max)
25.6
Units
°C
°C
°C/W
°C/W
Kg-cm
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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제조업체: SANGDEST MICROELECTRONICS
( sangdest )
121NQ040-1 rectifier
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