MBRB20100CT 반도체 회로 부품 판매점
Schottky Barrier Rectifier ( Diode )
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 Inchange Semiconductor |
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB20100CT
FEATURES
·Schottky barrier chip
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in high frequency rectifier of switching mode
power supplies,freewheeling diodes,DC-to-DC converters
or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current
100 V
20 A
Nonrepetitive Peak Surge Current
IFSM 8.3ms single half sine-wave superimposed on 150
rated load conditions
A
TJ Junction Temperature
-65~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB20100CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
IF=10A ; Tj=25℃
VF
Maximum
Voltage
Instantaneous
Forward
IF=10A ; Tj= 125℃
IF=20A ; Tj= 25℃
IF=20A ; Tj= 125℃
IR
Maximum
Current
Instantaneous
Reverse
VR= VRWM;Tj= 25℃
VR= VRWM;Tj= 125℃
TYP MAX UNIT
0.85
0.75
V
0.95
0.85
0.1 mA
6 mA
isc website：www.iscsemi.com
2 isc & iscsemi is registered trademark
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Inchange Semiconductor
( isc )
MBRB20100CT rectifier
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[ MBRB20100CT.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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