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Inchange Semiconductor |
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB1545CT
FEATURES
·Schottky barrier chip
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in high frequency rectifier of switching mode
power supplies,freewheeling diodes,DC-to-DC converters
or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current
45 V
15 A
Nonrepetitive Peak Surge Current
IFSM 8.3ms single half sine-wave superimposed on 150
rated load conditions
A
TJ Junction Temperature
-65~175 ℃
Tstg Storage Temperature Range
-65~175 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRB1545CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
IF=7.5A ; Tj= 125℃
VF
Maximum
Voltage
Instantaneous
Forward IF=15A ; Tj= 125℃
IF=15A ; Tj= 25℃
IR
Maximum
Current
Instantaneous
Reverse
VR= VRWM;Tj= 25℃
VR= VRWM;Tj= 125℃
TYP MAX UNIT
0.57
0.72 V
0.84
100 uA
15 mA
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
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