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MBRB10H100CT 반도체 회로 부품 판매점

Dual Common Cathode High Voltage Schottky Rectifier



Vishay 로고
Vishay
MBRB10H100CT 데이터시트, 핀배열, 회로
www.vishay.com
MBR(F,B)10H90CT, MBR(F,B)10H100CT
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR10H90CT
MBR10H100CT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF10H90CT
MBRF10H100CT
PIN 1
PIN 2
PIN 3
2
1
MBRB10H90CT
MBRB10H100CT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
5Ax2
90 V, 100 V
150 A
0.61 V
3.5 μA
175 °C
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94-V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC = 105 °C
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Peak repetitive reverse current per diode at tp = 2.0 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
IRRM
dV/dt
TJ, TSTG
VAC
MBR10H90CT
MBR10H100CT
90 100
90 100
90 100
10
5.0
150
0.5
10 000
- 65 to 175
1500
UNIT
V
A
V/μs
°C
V
Revision: 27-Jun-12
1 Document Number: 88668
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


MBRB10H100CT 데이터시트, 핀배열, 회로
www.vishay.com
MBR(F,B)10H90CT, MBR(F,B)10H100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage per diode
Maximum reverse current per diode
VF (1)
IR (1)
IF = 5 A
IF = 5 A
IF = 10 A
IF = 10 A
Rated VR
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 100 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
VALUE
0.76
0.61
0.85
0.71
3.5
4.5
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
Typical thermal resistance per diode
RJC
2.2
MBRF
5.2
MBRB
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
MBR10H100CT-E3/45
ITO-220AB
MBRF10H100CT-E3/45
TO-263AB
MBRB10H100CT-E3/45
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
MBRB10H100CT-E3/81
MBR10H100CTHE3/45 (1)
MBRF10H100CTHE3/45 (1)
MBRB10H100CTHE3/45 (1)
MBRB10H100CTHE3/81 (1)
Note
(1) AEC-Q101 qualified
UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
1.85
45
50/tube
Tube
1.79
45
50/tube
Tube
1.35
45
50/tube
Tube
1.35
81
800/reel
Tape and reel
1.85
45
50/tube
Tube
1.79
45
50/tube
Tube
1.35
45
50/tube
Tube
1.35
81
800/reel
Tape and reel
Revision: 27-Jun-12
2 Document Number: 88668
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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