MBRB2050CT 반도체 회로 부품 판매점
Dual Common-Cathode Schottky Rectifier
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 Vishay |
MBR(F,B)2035CT thru MBR(F,B)2060CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
TO-220AB
ITO-220AB
MBR20xxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
3
2
1
MBRF20xxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB20xxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
10 A x 2
35 V to 60 V
150 A
0.57 V, 0.70 V
150 °C
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020C, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR2035CT MBR2045CT MBR2050CT MBR2060CT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified total device
current at TC = 135 °C
per diode
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
VRRM
VRWM
VDC
IF(AV)
IFSM
35
35
35
45 50
45 50
45 50
20
10
150
60
60
60
Peak repetitive reverse surge current per diode at
tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
IRRM
dV/dt
TJ
TSTG
VAC
1.0 0.5
10000
- 65 to + 150
- 65 to + 175
1500
UNIT
V
V
V
A
A
A
V/µs
°C
°C
V
Document Number: 88674
Revision: 08-Nov-07
www.vishay.com
1
MBR(F,B)2035CT thru MBR(F,B)2060CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL MBR2035CT MBR2045CT MBR2050CT MBR2060CT UNIT
Maximum instantaneous
forward voltage per diode (1)
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
0.65
0.57
0.84
0.72
0.80
0.70
0.95
V
0.85
Maximum reverse current
per diode at rated DC
blocking voltage per diode (1)
TC = 25 °C
TC = 125 °C
IR
0.1
15
0.15
15
mA
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
Typical resistance from junction to case per diode
RθJC
2.0
MBRF
5.0
MBRB
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR2045CT-E3/45
1.85
ITO-220AB
MBRF2045CT-E3/45
1.99
TO-263AB
MBRB2045CT-E3/45
1.35
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
MBRB2045CT-E3/81
MBR2045CTHE3/45 (1)
MBRF2045CTHE3/45 (1)
MBRB2045CTHE3/45 (1)
MBRB2045CTHE3/81 (1)
1.35
1.85
1.99
1.35
1.35
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
16
12
8
4
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape reel
Tube
Tube
Tube
Tape reel
160
TJ = TJ max.
8.3 ms Single Half Sine-Wave
140
120
100
80
60
0
0 50 100 150
Case Temperature (°C)
Figure 1. Forward Derating Curve (Total)
40
1
10 100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
Document Number: 88674
Revision: 08-Nov-07
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MBRB2050CT rectifier
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