CY7C1474V33 반도체 회로 부품 판매점
(CY7C147xV33) 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM
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 Cypress Semiconductor |
www.DataSheet4U.com
CY7C1470V33
CY7C1472V33
CY7C1474V33
72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined SRAM with NoBL™ Architecture
Features
• Pin-compatible and functionally equivalent to ZBT™
• Supports 250-MHz bus operations with zero wait states
— Available speed grades are 250, 200 and 167 MHz
• Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
• Fully registered (inputs and outputs) for pipelined
operation
• Byte Write capability
• Single 3.3V power supply
• 3.3V/2.5V I/O power supply
• Fast clock-to-output time
— 3.0 ns (for 250-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• CY7C1470V33, CY7C1472V33 available in
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1474V33
available in lead-free and non-lead-free 209 ball FBGA
package
• IEEE 1149.1 JTAG Boundary Scan compatible
• Burst capability—linear or interleaved burst order
• “ZZ” Sleep Mode option and Stop Clock option
Functional Description
The CY7C1470V33, CY7C1472V33, and CY7C1474V33 are
3.3V, 2M x 36/4M x 18/1M x 72 Synchronous pipelined burst
SRAMs with No Bus Latency™ (NoBL™) logic, respectively.
They are designed to support unlimited true back-to-back
Read/Write operations with no wait states. The
CY7C1470V33, CY7C1472V33, and CY7C1474V33 are
equipped with the advanced (NoBL) logic required to enable
consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data in systems that require frequent
Write/Read transitions. The CY7C1470V33, CY7C1472V33,
and CY7C1474V33 are pin compatible and functionally equiv-
alent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle.
Write operations are controlled by the Byte Write Selects
(BWa–BWh for CY7C1474V33, BWa–BWd for CY7C1470V33
and BWa–BWb for CY7C1472V33) and a Write Enable (WE)
input. All writes are conducted with on-chip synchronous
self-timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
Logic Block Diagram-CY7C1470V33 (2M x 36)
A0, A1, A
MODE
CLK C
CEN
ADDRESS
REGISTER 0
WRITE ADDRESS
REGISTER 1
A1 D1
Q1 A1'
A0 D0 BURST Q0 A0'
LOGIC
ADV/LD
C
WRITE ADDRESS
REGISTER 2
ADV/LD
BWa
BWb
BWc
BWd
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
E
D
A
T
A
S
T
E
E
R
I
N
O
U
T
P
U
T
B
U
F
F
E
R
S
E
G
INPUT
REGISTER 1 E
INPUT
REGISTER 0 E
DQs
DQPa
DQPb
DQPc
DQPd
OE
CE1 READ LOGIC
CE2
CE3
ZZ SLEEP
CONTROL
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-05289 Rev. *I
Revised June 20, 2006
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Logic Block Diagram-CY7C1472V33 (4M x 18)
A0, A1, A
MODE
CLK C
CEN
ADDRESS
REGISTER 0
WRITE ADDRESS
REGISTER 1
A1 D1
Q1 A1'
A0 D0 BURST Q0 A0'
LOGIC
ADV/LD
C
WRITE ADDRESS
REGISTER 2
CY7C1470V33
CY7C1472V33
CY7C1474V33
ADV/LD
BWa
BWb
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
E
O
U
T
DP
AU
TT
A
B
SU
TF
EF
EE
RR
IS
N
G
E
INPUT
REGISTER 1 E
INPUT
REGISTER 0 E
DQs
DQPa
DQPb
OE
CE1
CE2
CE3
ZZ
READ LOGIC
Sleep
Control
Logic Block Diagram-CY7C1474V33 (1M x 72)
A0, A1, A
MODE
CLK C
CEN
ADDRESS
REGISTER 0
WRITE ADDRESS
REGISTER 1
A1 D1
Q1 A1'
A0 D0 BURST Q0 A0'
LOGIC
ADV/LD
C
WRITE ADDRESS
REGISTER 2
ADV/LD
BWa
BWb
BWc
BWd
BWe
BWf
BWg
BWh
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
E
O
U
T
DP
AU
TT
A
B
SU
TF
EF
EE
RR
IS
N
G
E
INPUT
REGISTER 1 E
INPUT
REGISTER 0 E
DQs
DQPa
DQPb
DQPc
DQPd
DQPe
DQPf
DQPg
DQPh
OE
CE1
CE2
CE3
ZZ
READ LOGIC
Sleep
Control
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
250 MHz
3.0
500
120
200 MHz
3.0
500
120
167 MHz
3.4
450
120
Unit
ns
mA
mA
Document #: 38-05289 Rev. *I
Page 2 of 29
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CY7C1474V33 ram
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CY7C1474V33
(CY7C147xV33) 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM - Cypress Semiconductor
