M6MGT166S4BWG 반도체 회로 부품 판매점
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
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 Mitsubishi |
MITSUBISHI LSIs
M6MGB/T166S4BWG
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
DESCRIPTION
The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip
Scale Package (S-CSP) that contents 16M-bits flash
memory and 4M-bits Static RAM in a 72-pin S-CSP.
16M-bits Flash memory is a 1,048,576 words, 3.3V-only,
and high performance non-volatile memory fabricated by
CMOS technology for the peripheral circuit and
DINOR(DIvided bit-line NOR) architecture for the memory
cell.
4M-bits SRAM is a 262,144words unsynchronous SRAM
fabricated by silicon-gate CMOS technology.
M6MGB/T166S4BWG is suitable for the application of the
mobile-communication-system to reduce both the mount
space and weight .
FEATURES
• Access time
Flash Memory
90ns (Max.)
SRAM
85ns (Max.)
• Supply voltage
Vcc=2.7 ~ 3.6V
• Ambient temperature
W version
Ta=-20 ~ 85°C
• Package : 72-pin S-CSP , 0.8mm ball pitch
APPLICATION
Mobile communication products
PIN CONFIGURATION (TOP VIEW)
HGF E DCB A
NC NC 1
NC NC 2
DU F-A18 S-LB# F-WP# GND F-WE# A16 DU 3
F-
A5 F-A17 S-UB# DU F-RP# RY/BY# A8 A11 4
A4 A7 S-OE# F-A19 DU DU A10 A15 5
A0 A6 DU DQ11 DU S-A17 A9 A14 6
F-CE# A3 DQ9 DU DQ12 DQ13 DQ15 A13 7
F-GND A2
DQ8
DQ10
S-
CE2
DQ6 S-WE# A12 8
F-OE# A1 DQ0 DQ2 S-VCC DQ4 DQ14 9F-GND
DU
S-
CE1#
DQ1 DQ3 F-VCC DQ5 DQ7
DU 10
NC NC 11
NC NC 12
8.0 mm
INDEX
F-VCC
:Vcc for Flash
S-VCC
:Vcc for SRAM
F-GND
:GND for Flash
GND
:Flash/SRAM common GND
A0-A16
:Flash/SRAM
common Address
F-A17-F-A19 :Address for Flash
S-A17
:Address for SRAM
DQ0-DQ15 :Flash/SRAM
common Data I/O
F-CE#
:Flash Chip Enable
S-CE1#
:SRAM Chip Enable
S-CE2
:SRAM Chip Enable
F-OE#
S-OE#
:Flash Output Enable
:SRAM Output Enable
F-WE#
:Flash Write Enable
S-WE#
:SRAM Write Enable
F-WP#
:Flash Write Protect
F-RP#
:Flash Reset Power Down
F-RY/BY# :Flash Ready /Busy
S-LB#
:SRAM Lower Byte
S-UB#
:SRAM Upper Byte
NC:Non Connection
DU:Don't Use (Note: Should be open)
1 Apr. 1999 , Rev.1.7
BLOCK DIAGRAM
16Mb Flash Memory
F-A19
F-A18
F-A17
A16
ADDRESS
INPUTS
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
CHIP ENABLE INPUT
OUTPUT ENABLE INPUT
WRITE ENABLE INPUT
WRITE PROTECT INPUT
RESET/POWER DOWN INPUT
F-CE#
F-OE#
F-WE#
F-WP#
F-RP#
READY/BUSY OUTPUT F-RY/BY#
4Mb SRAM
A0
A1
A16
S-A17
S-CE1#
S-CE2
S-LB#
S-UB#
S-WE#
S-OE#
2
MITSUBISHI LSIs
M6MGB/T166S4BWG
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
X-DECODER
Y-DECODER
128 WORD PAGE BUFFER
Main Block
32KW
28
Main Block
Parameter Block7
Parameter Block6
Parameter Block5
Parameter Block4
Parameter Block3
Parameter Block2
Parameter Block1
Boot Block
32KW
16KW
16KW
16KW
16KW
16KW
16KW
16KW
16KW
Y-GATE / SENSE AMP.
F-VCC(3.3V)
F-GND/GND
(0V)
STATUS / ID REGISTER
CUI WSM
MULTIPLEXER
INPUT/OUTPUT
BUFFERS
DQ15 DQ14DQ13DQ12
DQ3DQ2DQ1DQ0
DATA INPUTS/OUTPUTS
262144 WORD x
16 BITS
DQ 0
DQ 7
DQ 8
CLOCK
GENERATOR
DQ15
S-VCC
GND
Apr. 1999 , Rev.1.7
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( mitsubishi )
M6MGT166S4BWG ram
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