IDT71V3558S133PFGI 반도체 회로 부품 판매점
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs
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 Integrated Device Technology |
128K x 36, 256K x 18
3.3V Synchronous ZBT SRAMs
3.3V I/O, Burst Counter
Pipelined Outputs
IDT71V3556S
IDT71V3558S
IDT71V3556SA
IDT71V3558SA
Features
x 128K x 36, 256K x 18 memory configurations
x Supports high performance system speed - 200 MHz
(3.2 ns Clock-to-Data Access)
x ZBTTM Feature - No dead cycles between write and read
cycles
x Internally synchronized output buffer enable eliminates the
need to control OE
x Single R/W (READ/WRITE) control pin
x Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
x 4-word burst capability (interleaved or linear)
x Individual byte write (BW1 - BW4) control (May tie active)
x Three chip enables for simple depth expansion
x 3.3V power supply (±5%), 3.3V I/O Supply (VDDQ)
x Optional- Boundary Scan JTAG Interface (IEEE 1149.1
compliant)
x Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA)
Description
The IDT71V3556/58 are 3.3V high-speed 4,718,592-bit (4.5 Mega-
bit) synchronous SRAMS. They are designed to eliminate dead bus
cycles when turning the bus around between reads and writes, or
writes and reads. Thus, they have been given the name ZBTTM, or
Zero Bus Turnaround.
Address and control signals are applied to the SRAM during one
clock cycle, and two cycles later the associated data cycle occurs, be it
read or write.
The IDT71V3556/58 contain data I/O, address and control signal
registers. Output enable is the only asynchronous signal and can be used
to disable the outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71V3556/58
to be suspended as long as necessary. All synchronous inputs are
ignored when (CEN) is high and the internal device registers will hold
their previous values.
There are three chip enable pins (CE1, CE2, CE2) that allow the user
to deselect the device when desired. If any one of these three are not
asserted when ADV/LD is low, no new memory operation can be
initiated. However, any pending data transfers (reads or writes) will be
completed. The data bus will tri-state two cycles after chip is deselected
or a write is initiated.
Pin Description Summary
A0-A17
CE1, CE2, CE2
OE
R/W
CEN
BW1, BW2, BW3, BW4
CLK
ADV/LD
LBO
TMS
TDI
TCK
TDO
TRST
ZZ
I/O0-I/O31, I/OP1-I/OP4
VDD, VDDQ
VSS
Address Inputs
Chip Enables
Output Enable
Read/Write Signal
Clock Enable
Individual Byte Write Selects
Clock
Advance b urst address / Load new address
Linear / Interleaved Burst Order
Test Mode Select
Test Data Input
Test Clock
Test Data Output
JTAG Reset (Optional)
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
©2004 Integrated Device Technology, Inc.
1
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Static
Synchronous
Synchronous
N/A
Synchronous
Asynchronous
Synchronous
Synchronous
Static
Static
5281 tbl 01
SEPTEMBER 2004
DSC-5281/08
IDT71V3556, IDT71V3558, 128K x 36, 256K x 18, 3.3V Synchronous SRAMS with
ZBT™ Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Description continued
The IDT71V3556/58 has an on-chip burst counter. In the burst
mode, the IDT71V3556/58 can provide four cycles of data for a single
address presented to the SRAM. The order of the burst sequence is
defined by the LBO input pin. The LBO pin selects between linear and
interleaved burst sequence. The ADV/LD signal is used to load a new
Pin Definition(1)
externaladdress(ADV/LD =LOW)orincrementtheinternalburstcounter
(ADV/LD = HIGH).
The IDT71V3556/58 SRAMs utilize IDT's latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
Symbol
Pin Function
I/O Active Description
A0-A17
Address Inputs
I
N/A
Synchronous Address inputs. The address register is triggered by a combination of the rising edge of CLK,
ADV/LD low, CEN low, and true chip enables.
ADV/LD is a synchronous input that is used to load the internal registers with new addres s and control when it
is sampled low at the rising edge of clock with the chip selected. When ADV/LD is low with the chip
ADV/LD Advance / Load I N/A deselected, any burst in progress is terminated. When ADV/LD is sampled high then the internal burst counter
is advanced for any burst that was in progress. The external addresses are ignored when ADV/ LD is sampled
high.
R/W
Read / Write
I
N/A
R/W signal is a synchronous input that identifies whether the current load cycle initiated is a Read or Write
access to the memory array. The data bus activity for the current cycle takes place two clock cycles later.
Sync hronous Clock Enable Input. When CEN is sampled high, all other synchronous inputs, including clock are
CEN
Clock Enable
I LOW ignored and outputs remain unchanged. The effect of CEN sampled high on the device outputs is as if the low
to high clock transition did not occur. For normal operation, CEN must be sampled low at rising edge of clock.
BW1-BW4
Individual Byte
Write Enables
Synchronous byte write enables. Each 9-bit b yte has its own active low byte write enable. On load write cycles
(When R/W and ADV/LD are sampled low) the appropriate byte write signal (BW1-BW4) must be valid. The byte
I LOW write signal must also be valid on each cycle of a burst write. Byte Write signals are ignored when R/W is
sampled high. The appropriate byte(s) of data are written into the de vice two cycles later. BW1-BW4 can all be
tied low if always doing write to the entire 36-bit word.
CE1, CE2
Chip Enables
Synchronous active low chip enable. CE1 and CE2 are used with CE2 to enable the IDT71V3556/58. (CE1 or
I LOW CE2 sampled high or CE2 sampled low) and ADV/LD low at the rising edge of clock, initiates a deselect cycle.
The ZBTTM has a two cycle deselect, i.e., the data bus will tri-state two clo ck cycles after deselect is initiated.
CE2
Chip Enable
I
HIGH
Sync hronous active high chip enable. CE2 is used with CE1 and CE2 to enable the chip. CE2 has inverted
polarity but otherwise identical to CE1 and CE2.
CLK
Clock
I
N/A
This is the clock input to the IDT71V3556/58. Except for OE, all timing references for the device are made with
respect to the rising edge of CLK.
I/O0-I/O31
I/OP1-I/OP4
Data Input/Output
I/O
N/A
Synchronous data input/output (I/O) pins . Both the data input path and data output path are registered and
triggered by the rising edge of CLK.
LBO
Linear Burst Order
I
LOW
Burst order selection input. When LBO is high the Interleaved burst sequence is selected. When LBO is low
the Linear burst sequence is selected. LBO is a static input and it must not change during device operation.
Asynchronous output enable. OE must be low to read data from the 71V3556/58. When OE is high the I/O pins
OE
Output Enable
I LOW are in a high-impedance state. OE does not need to be actively controlled for read and write cycles. In normal
operation, OE can be tied low.
TMS
Test Mode Select
I
N/A Gives input command for TAP controller. Sampled on rising edge of TDK. This pin has an internal pullup.
TDI
Test Data Input
I
N/A
Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has an internal
pullup.
TCK
Test Clock
I
N/A
Clock input of TAP controller. Each TAP event is clocked. Test inputs are captured o n rising edge of TCK,
while test outputs are d riven from the falling edge of TCK. This pin has an internal pullup.
TDO
Test Data Output
O
N/A
Serial output of registers placed between TDI and TDO. This output is active depending on the state of the TAP
controller.
TRST
JTAG Reset
(Optional)
Optional Asynchronous JTAG reset. Can be used to reset the TAP controller, but not required. JTAG reset
I LOW occurs automatically at power up and also resets using TMS and TCK per IEEE 1149.1. If not used TRST can
be left floating. This pin has an internal pullup. Only available in BGA package.
Synchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the IDT71V3556/3558 to
ZZ
Sleep Mode
I HIGH its lowest power consumption level. Data retention is guaranteed in Sleep Mode. This pin has an internal
pulldown.
VDD
Power Supply
N/A N/A 3.3V core power supply.
VDDQ
Power Supply
N/A N/A 3.3V I/O Supply.
VSS
Ground
N/A N/A Ground.
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.422
5281 tbl 02
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IDT71V3558S133PFGI ram
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관련 데이터시트
IDT71V3558S133PFG
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs - Integrated Device Technology
IDT71V3558S133PFGI
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs - Integrated Device Technology