RU8099R 반도체 회로 부품 판매점
N-Channel Advanced Power MOSFET
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 Ruichips |
RU8099
N-Channel Advanced Power MOSFET
Features
• 90V/90A
RDS (ON)=8mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Extremely high dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
·High efficiency switching mode
power supply
Pin Description
TO-220
TO-220F
TO-247
TO-263
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
StoragEeAST②emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed
-55 to 150
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
90
±25
175
-55 to 175
①
90
360
①
90
65
175
86
0.86
62.5
1306
Unit
V
°C
°C
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev.A –SEP., 2010
www.ruichips.com
RU8099
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU8099
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS= 90V, VGS=0V
IDSS Zero Gate Voltage Drain Current
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
③
RDS(ON)
Drain-Source On-state Resistance
VGS= 10V, IDS=40A
90
2
V
1
µA
30
34V
±100 nA
8 10 mΩ
Diode Characteristics
③
VSD
Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
④
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
④
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=40 A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 25V,
Frequency=1.0MHz
VDD=40V,IDS= 40A, VGEN=
10V,RG=2.5Ω
VDS=72V, VGS= 10V,
IDS=80A
1.2 V
90 ns
200 nC
1.5
2550
810
210
25
205
150
130
Ω
pF
ns
85 120
19 nC
30
Notes:
①Current limited by package.
② IAS =75A, VDD = 50V, RG = 47Ω , Starting TJ = 25°C
③Pulse test ; Pulse width≤400µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
2
www.ruichips.com
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RU8099R mosfet
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