TSM180N03PQ33 반도체 회로 부품 판매점
N-Channel Power MOSFET / Transistor
|
|
 Taiwan Semiconductor |
TSM180N03PQ33
30V N-Channel Power MOSFET
PDFN33
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = 10V
VGS = 4.5V
Qg
30
18
28
4.1
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM180N03PQ33 RGG PDFN33 5Kpcs / 13” Reel
● Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Energy (Note 2)
Power Dissipation @ TC = 25°C
Operating Junction Temperature
Storage Temperature Range
TC=25°C
TC=100°C
VDS
VGS
ID
IDM
EAS
PD
TJ
TSTG
N-Channel MOSFET
Limit
30
±20
25
16
100
32
21
+150
-55 to +150
Unit
V
V
A
A
A
mJ
W
°C
°C
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
Thermal Resistance - Junction to Case
Symbol
RӨJA
RӨJC
Limit
62
6
Unit
°C/W
°C/W
1/5 Version: A14
TSM180N03PQ33
30V N-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 8A
VDS = VGS, ID = 250µA
BVDSS 30 -- -- V
-- 14 18
RDS(ON)
--
mΩ
20 28
VGS(TH)
1.2 1.6 2.5
V
VDS = 30V, VGS = 0V
-- -- 1
Zero Gate Voltage Drain Current
IDSS µA
VDS = 24V, TJ = 125°C
-- -- 10
Gate Body Leakage
VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA
Forward Transconductance (Note 3)
VDS = 10V, ID = 6A
gfs
-- 6.5 --
S
Dynamic
Total Gate Charge (Note 3,4)
Gate-Source Charge (Note 3,4)
Gate-Drain Charge (Note 3,4)
VDS = 15V, ID = 6A,
VGS = 4.5V
Qg -- 4.1 --
Qgs -- 1 -- nC
Qgd -- 2.1 --
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ciss -- 345 --
Coss -- 55 -- pF
Crss -- 32 --
Turn-On Delay Time (Note 3,4)
Turn-On Rise Time (Note 3,4)
Turn-Off Delay Time (Note 3,4)
Turn-Off Fall Time (Note 3,4)
VDD = 15V, ID = 1A,
VGS = 10V, RG = 6Ω
Source-Drain Diode Ratings and Characteristic
td(on)
tr
td(off)
tf
-- 2.8 --
-- 7.2 --
-- 15.8 --
-- 4.6 --
ns
Maximum Continuous Drain-Source
Diode Forward Current
Integral reverse diode in
IS
Maximum Pulse Drain-Source Diode the MOSFET
Forward Current
ISM
Diode-Source Forward Voltage
Note:
VGS = 0V, IS = 1A
VSD
1. Pulse width limited by safe operating area
2. L = 1mH, IAS = 8A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C
3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
4. Switching time is essentially independent of operating temperature.
-- -- 25 A
-- -- 100 A
-- -- 1 V
2/5 Version: A14
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Taiwan Semiconductor
( taiwan )
TSM180N03PQ33 mosfet
데이터시트 다운로드 :
[ TSM180N03PQ33.PDF ]
[ TSM180N03PQ33 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
