HFP13N60U 반도체 회로 부품 판매점
N-Channel MOSFET
|
|
 SemiHow |
HFP13N60U
600V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 60.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : ȍ(Typ.) @VGS=10V
100% Avalanche Tested
Sep 2012
BVDSS = 600 V
RDS(on) typ = 0.33 ȍ
ID = 14.0 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
14.0
8.8
56.0
ρ30
810
14.0
23.0
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
230
1.84
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.54
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣͣ͑͢͡
Package Marking and Odering Information
Device Marking Week Marking
Package
Packing
HFP13N60U
YWWX
TO-220
Tube
HFP13N60U
YWWXg
TO-220
Tube
Quantity
50
50
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 Ꮃ
VGS = 10 V, ID = 7.0 A
2.5
--
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
Dynamic Characteristics
VGS = 0 V, ID = 250 Ꮃ
ID = 250 Ꮃ, Referenced to 25
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = ρ30 V, VDS = 0 V
600
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 14.0 A,
RG = 25
(Note 4,5)
VDS = 480 V, ID = 14.0 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 14.0 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 14.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
Typ Max Units
-- 4.5
0.33 0.41
V
-- -- V
0.6 -- V/
-- 1 Ꮃ
-- 10 Ꮃ
-- ρ100 Ꮂ
3200
250
16.0
4160
330
21.0
Ꮔ
Ꮔ
Ꮔ
95
90
360
90
60.0
16.0
17.0
190
180
720
180
78.0
--
--
Ꭸ
Ꭸ
Ꭸ
Ꭸ
nC
nC
nC
-- 14.0
-- 56
-- 1.4
377 --
8.2 --
A
V
Ꭸ
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=7.6mH, IAS=14.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD$, di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ȝV'XW\&\FOH
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣͣ͑͢͡
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: SemiHow
( semihow )
HFP13N60U mosfet
데이터시트 다운로드 :
[ HFP13N60U.PDF ]
[ HFP13N60U 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
