DMN3730U 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE MOSFET
|
|
 Diodes |
A Product Line of
Diodes Incorporated
DMN3730U
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
V(BR)DSS
30V
Max RDS(on)
460mΩ @ VGS= 4.5V
560mΩ @ VGS= 2.5V
ID Max (Note 5)
TA = 25°C
0.94A
0.85A
Features and Benefits
• Low VGS(th), can be driven directly from a battery
• Low RDS(on)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2kV
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
• Portable applications
• Power Management Functions
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish-Matte Tin.
• Weight: 0.08 grams (approximate)
SOT23
Drain
Gate
Body
Diode
D
ESD PROTECTED TO 2kV
Top View
Gate
Protection
Diode
Source
Equivalent Circuit
GS
Top View
Pin-Out
Ordering Information (Note 3)
Part Number
DMN3730U-7
Marking
N3U
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
3,000
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
N3U
N3U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
1 of 7
www.diodes.com
July 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3730U
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
Steady
State
Pulsed Drain Current (Note 6)
TA = 25°C (Note 5)
TA = 85°C (Note 5)
TA = 25°C (Note 4)
Symbol
VDSS
VGSS
ID
IDM
Value
30
±8
0.94
0.68
0.75
10
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Symbol
PD
RθJA
TJ, TSTG
Value
0.45
0.71
275
177
-55 to +150
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
Unit
V
V
A
A
Unit
W
W
°C/W
°C/W
°C
Thermal Characteristics
100
90
80
70
Single Pulse
Rthja = 176C/W
Rthja(t) = Rthja*r(t)
TJ - TA = P*Rthja (t)
60
50
40
30
20
10
0
0.001
0.01 0.1 1 10 100 1000
T1, PULSE DURATION SECTION (sec)
Fig. 1 Single Maximum Power Dissipation
100
10
1
RDS(ON)
Limited
ID (A) @
PW = 1ms
ID (A) @
PW = 10ms
ID (A) @
PW = 100ms
ID (A) @
PW = 100µs
ID (A) @ DC
0.1
0.01
TJ, (Max) = 150°C
TA = 25°C
Single Pulse
ID (A) @
PW = 1s
ID (A) @
PW = 10µs
0.001
0.01
0.1
1
10 100
VDS, DRAIN-SOURCE VOLTAGE
Fig. 2 SOA, Safe Operation Area
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
2 of 7
www.diodes.com
July 2011
© Diodes Incorporated
|
PDF 파일 내의 페이지 : 총 7 페이지
제조업체: Diodes
( diodes )
DMN3730U mosfet
데이터시트 다운로드 :
[ DMN3730U.PDF ]
[ DMN3730U 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
DMN3730U
N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes
DMN3730UFB
30V N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes
DMN3730UFB4
30V N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes