DMG3413L 반도체 회로 부품 판매점
20V P-CHANNEL ENHANCEMENT MODE MOSFET
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 Diodes |
DMG3413L
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(on) max
95mΩ @ VGS = -4.5V
130mΩ @ VGS = -2.5V
ID
TA = +25°C
3.0A
2.5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0072 grams (approximate)
Drain
SOT23
D
Gate
Top View
GS
Pin Configuration
Source
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMG3413L-7
Case
SOT23
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G33 G33
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb Mar
23
2012
Z
Apr
4
2013
A
May
5
G33 = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2014
B
Jun Jul
67
2015
C
Aug
8
2016
D
Sep
9
2017
E
Oct Nov
ON
2018
F
Dec
D
DMG3413L
Document number: DS35051 Rev. 4 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG3413L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.7
184
115
1.3
94
61
25
-55 to +150
Units
W
°C/W
W
°C/W
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = -2.5V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Value
-20
8
3.0
2.4
3.7
2.9
2.5
2.0
3.2
2.5
1.9
20
Units
V
V
A
A
A
A
A
A
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-20
—
—
-0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
-0.55
73
95
146
8
-0.8
857
54
49
12.3
9.0
1.6
1.1
9.7
17.7
268.8
64.2
Max
—
-1.0
±100
-1.3
95
130
190
-
-1.25
—
—
—
—
—
—
—
—
—
—
—
Unit Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -16V, VGS = 0V
nA VGS = 8V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -3.0A
mΩ VGS = -2.5V, ID = -2.6A
VGS = -1.8V, ID = -1A
S VDS = -5V, ID = -3A
V VGS = 0V, IS = -1A
pF
pF VDS = -10V, VGS = 0V
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -15V, ID = -4A
nC
ns
ns VDS = -15V, VGS = -10V,
ns RL = 15, RG = 6.0ID = -1A
ns
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG3413L
Document number: DS35051 Rev. 4 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
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