SPR45N10 반도체 회로 부품 판매점
N-Channel Enhancement Mode Power MOSFET
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 SeCoS |
Elektronische Bauelemente
SPR45N10
45A , 100V , RDS(ON) 22 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR45N10 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The PR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
PR-8PP
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
45N10
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.9 5.1
5.7 5.9
5.95 6.2
1.27 BSC.
0.35 0.49
0.1 0.2
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
0.8 1.0
0.254 Ref.
4.0 Ref.
3.4 Ref.
0.6 Ref.
1.4 Ref.
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1@VGS=10V TC=25°C
TC=100°C
Pulsed Drain Current 2
TC=25°C
Single Pulse Avalanche Energy 3
VDS
VGS
ID
I DM
EAS
100
±20
45
28
100
98
Avalanche Current
Total Power Dissipation 4
TC=25°C
Operating Junction & Storage Temperature
IAS
PD
TJ, TSTG
41
90
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA
RθJC
36
1.4
Unit
V
V
A
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
20-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4
Elektronische Bauelemente
SPR45N10
45A , 100V , RDS(ON) 22 mΩ
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
100 -
-
V VGS=0, ID= 250µA
Gate-Threshold Voltage
VGS(th)
2.5 - 4.5 V VDS=VGS, ID=250µA
Forward Tranconductance
gfs
- 27 -
S VDS=5V, ID=30A
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±20V
Drain-Source Leakage Current
- -1
VDS=80V, VGS=0, TJ=25°C
IDSS
µA
- -5
VDS=80V, VGS=0, TJ=55°C
Static Drain-Source On-Resistance 2
RDS(ON)
- 19 22
VGS=10V, ID=30A
mΩ
- 25 30
VGS=7V, ID=15A
Gate Resistance
Rg
-
1.9 3.8
Ω f =1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
- 27.6 -
- 11.4 -
- 7.9 -
- 15.6 -
- 17.2 -
- 16.8 -
- 9.2 -
ID=30A
nC VDS=80V
VGS=10V
VDD=50V
nS
ID=30A
VGS=10V
RG=3.3Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss - 1890 -
VGS =0
Coss
- 268 -
pF VDS=15V
Crss - 67 -
f =1.0MHz
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5
EAS
53 -
- mJ VDD=25V, L=0.1mH, IAS=30A
Diode Forward Voltage 2
Continuous Source Current 1,6
Pulsed Source Current 2,6
Source-Drain Diode
VSD - -
IS - -
ISM - -
1
45
100
V IS=1A, VGS=0V
A
VG=VD=0, Force Current
A
Reverse Recovery Time
Reverse Recovery Charge
trr - 34 - nS IF=30A, dl/dt=100A/µs,
Qrr - 47 - nC TJ=25°C
Note:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=41A
4. The power dissipation is limited by 150°C juncti on temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
20-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 4
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SPR45N10 mosfet
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