RU8590R 반도체 회로 부품 판매점
N-Channel Advanced Power MOSFET
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 Ruichips |
RU8590R
N-Channel Advanced Power MOSFET
Features
• 85V/90A,
RDS (ON) =5.8mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High Speed Power Switching
• UPS
Pin Description
GD
S
TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
85
±25
175
-55 to 175
90
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
360 A
90
A
64
188
W
94
0.8 °C/W
62.5 °C/W
306 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
1
www.ruichips.com
RU8590R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU8590R
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS=85V, VGS=0V
IDSS Zero Gate Voltage Drain Current
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=45A
Diode Characteristics
85 90
1
30
234
±100
5.8 8
④
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=45A, VGS=0V
ISD=45A, dlSD/dt=100A/µs
1.2
29
45
Dynamic Characteristics⑤
RG
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=40V,
Frequency=1.0MHz
VDD=40V,IDS=45A,
VGEN=10V,RG=0.8Ω
1.3
4350
480
275
25
49
121
tf Turn-off Fall Time
Gate Charge Characteristics⑤
17
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=68V, VGS=10V,
IDS=45A
48
13
16
Unit
V
µA
V
nA
mΩ
V
ns
nC
Ω
pF
ns
nC
Notes:
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
③Limited by TJmax, IAS =35A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
2
www.ruichips.com
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RU8590R mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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