8N50H 반도체 회로 부품 판매점
N-CHANNEL POWER MOSFET
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 Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
8N50H
8A, 500V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 8N50H is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 8N50H is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON)=0.8Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1
TO-220F
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N50HL-TF3-T
8N50HG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-745.A
8N50H
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
500
±30
V
V
Drain Current
Continuous (TC=25°C)
ID
7 (Note 2)
A
Avalanche Current (Note 3)
Single Pulsed Avalanche Energy (Note 4)
IAR
EAS
7A
270 mJ
Power Dissipation
PD
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 10mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=3.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDD=50V, ID=1.3A, IG=100uA,
VGS=10V (Note 1, 2)
VDD=30V, ID=0.5A, RG =25Ω,
VGS=0~10V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Drain-Source Diode Forward Voltage
VSD IS=7A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
500 V
1 µA
+100 nA
-100 nA
2.0 4.0 V
0.8 1 Ω
pF
pF
pF
12.8 16.6
3.7
5.8
6 20
55 120
25 60
35 80
nC
nC
nC
ns
ns
ns
ns
7A
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-745.A
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8N50H mosfet
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