UTT80N08 반도체 회로 부품 판매점
N-CHANNEL POWER MOSFET
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 Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
UTT80N08
Preliminary
80A, 80V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UTT80N08 is an N-channel MOSFET using UTC
advanced technology. It can be used in applications, such as power
supply (secondary synchronous rectification), industrial and primary
switch etc.
FEATURES
* Trench FET Power MOSFETS Technology
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT80N08L-TA3-T
UTT80N08G-TA3-T
UTT80N08L-TF1-T
UTT80N08G-TF1-T
Note: G: GND, D: Drain, S: Source
Package
TO-220
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-468.b
UTT80N08
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate Source Voltage
VGS ±20 V
Continuous Drain Current
ID 80 A
Pulsed Drain Current
IDM 320 A
Avalanche Energy, Single Pulse
EAS 320 mJ
Power Dissipation
TO-220
TO-220F1
PD
137 W
70 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
L=0.1mH, IAS=80A, VDD=25V, RG=20Ω, Starting TJ =25°C.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/ TO-220F1
Junction to Case
TO-220
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
0.91
1.77
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
ID=250μA, VGS=0V
VDS=80V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=80A
80
2.1
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QGS
QGD
QG
tD(ON)
tR
tD(OFF)
tF
VDD=60V, VGS=0~10V, ID=80A
VDD=40V, RG=2.2Ω
ID=80A, VGS=10V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
Current
IS
Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD ISD=80A
Note: 1. Defined by design. Not subject to production test.
2. Qualified at -20V and +20V.
TYP
0.01
±1
4700
1260
580
25
69
144
26
50
61
30
0.9
MAX
1
±100
4.0
12
37
116
180
80
320
1.3
UNIT
V
µA
nA
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT80N08 mosfet
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