SQJ850EP 반도체 회로 부품 판매점
Automotive N-Channel MOSFET
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 Vishay |
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SQJ850EP
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
PowerPAK® SO-8L Single
60
0.023
0.032
24
Single
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
4
G
3
S
2
S
1
S
D
5.13 mm
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SQJ850EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
LIMIT
60
± 20
24
17
24
96
15
11
45
15
- 55 to + 175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
RthJA
70
°C/W
RthJC
3.3
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-2419-Rev. F, 19-Dec-11
1
Document Number: 65280
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQJ850EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 60 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VGS = 0 V
VGS = 0 V
VGS = 10 V
VDS = 60 V, TJ = 125 °C
VDS = 60 V, TJ = 175 °C
VDS ≥ 5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
ID = 10.3 A
ID = 8.7 A
ID = 10.3 A, TJ = 125 °C
Forward Transconductanceb
Dynamicb
VGS = 10 V ID = 10.3 A, TJ = 175 °C
gfs VDS = 15 V, ID = 10.3 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 30 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VGS = 10 V
VDS = 30 V, ID = 6 A
f = 1 MHz
VDD = 30 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6.0 Ω
Pulsed Currenta
ISM
Forward Voltage
VSD IF = 3.8 A, VGS = 0
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
60
1.5
-
-
-
-
30
-
-
-
-
-
-
-
-
-
-
-
0.20
-
-
-
-
-
-
TYP. MAX. UNIT
-
2.0
-
-
-
-
-
0.019
0.026
0.034
0.042
29
-
2.5
± 100
1
50
150
-
0.023
0.032
0.040
0.051
-
V
nA
μA
A
Ω
S
980 1225
170 215
70 88
20 30
2.9 -
4.4 -
1.12 2.04
21 29
15 22
22 35
8 12
pF
nC
Ω
ns
- 96
0.8 1.2
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2419-Rev. F, 19-Dec-11
2
Document Number: 65280
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SQJ850EP mosfet
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