SQJ488EP 반도체 회로 부품 판매점
Automotive N-Channel MOSFET
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 Vishay |
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SQJ488EP
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
100
0.0210
0.0258
42
Single
PowerPAK® SO-8L Single
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please
see www.vishay.com/doc?99912
D
6.15 mm
1
Top View
5.13 mm
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
1
2S
3S
4S
G
Bottom View
G
N-Channel MOSFET
S
PowerPAK SO-8L
SQJ488EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
TC = 25 °C a
TC = 125 °C
VGS
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
TJ, Tstg
LIMIT
100
± 20
42
24
60
170
5.8
1.68
83
27
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
RthJA
65
°C/W
RthJC
1.8
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S14-2219-Rev. B, 10-Nov-14
1
Document Number: 62846
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQJ488EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 100 V
VGS = 0 V VDS = 100 V, TJ = 125 °C
VGS = 0 V VDS = 100 V, TJ = 175 °C
VGS = 10 V
VDS ≥ 5 V
VGS = 10 V
ID = 7.1 A
VGS = 4.5 V
ID = 6.4 A
VGS = 10 V
ID = 7.1 A, TJ = 125 °C
VGS = 10 V
ID = 7.1 A, TJ = 175 °C
VDS = 15 V, ID = 7.1 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 50 V, f = 1 MHz
VGS = 10 V
VDS = 50 V, ID = 15 A
f = 1 MHz
VDD = 50 V, RL = 5 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Pulsed Current a
Forward Voltage
ISM
VSD IF = 4.7 A, VGS = 0
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
100
1.5
-
-
-
-
30
-
-
-
-
-
-
-
-
-
-
-
1.1
-
-
-
-
-
-
TYP. MAX. UNIT
--
2.0 2.5
- ± 100
-1
- 50
- 150
--
0.0176 0.0210
0.0215 0.0258
- 0.0360
- 0.0450
28 -
V
nA
μA
A
Ω
S
782 978
372 462 pF
44 55
18 27
2 - nC
4.7 -
2.2 3.3 Ω
46
11 16
ns
20 30
4.6 7
- 128
0.78 1.2
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2219-Rev. B, 10-Nov-14
2
Document Number: 62846
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SQJ488EP mosfet
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