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Infineon |
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM5Power-MOSFET,30V
BSZ0501NSI
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
1Description
Features
•Optimizedforhighperformancebuckconverters
•MonolithicintegratedSchottky-likediode
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
2.0
mΩ
ID 40 A
QOSS
18
nC
QG(0V..4.5V)
11.4
nC
OptiMOSTM5Power-MOSFET,30V
BSZ0501NSI
TSDSON-8FL
(enlarged source interconnection)
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSZ0501NSI
Package
PG-TSDSON-8 FL
Marking
0501NSI
RelatedLinks
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1) J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2015-04-27
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