UT3443 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
UT3443
P-CHANNEL 2.5-V (G-S)
MOSFET
DESCRIPTION
The UTC UT3443 is a P-channel power MOSFET using UTC’s
advanced trench technology to provide customers with a minimum
on-state resistance and extremal low gate charge with a 12V gate
rating.
FEATURES
* VDS(V)= -20V
* ID=-4.5A
*RDS(ON) < 100mΩ @VGS = -2.5V,
RDS(ON) < 65mΩ @VGS = -4.5V
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
UT3443G-AG6-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-26
Pin Assignment
123456
Packing
D D G S D D Tape Reel
MARKING
654
CD3G
123
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-557.B
UT3443
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS -20 V
VGSS ±12 V
Drain Current
Continuous
TA=25°C
TJ =150°C (Note 2) TA=70°C
ID
-4.5 A
-3.6 A
Pulsed
Power Dissipation (Note 2)
TA=25°C
IDM
PD
-20 A
1.1 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Note: Surface Mounted on FR4 Board, t≤5 sec
SYMBOL
θJA
RATINGS
110
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
IDSS
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TC=70°C
IGSS
VGS=+12V, VDS=0V
VGS=-12V, VDS=0V
-1
-5
+100
-100
µA
nA
nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 1)
SWITCHING PARAMETERS (Note 2)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Gate Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250µA
VGS=-4.5V, ID=-4.5A
VGS=-2.7V, ID=-3.8A
VGS=-2.5V, ID=-3.7A
-0.6 -1.4
0.050 0.065
0.070 0.090
0.080 0.100
V
Ω
Ω
Ω
QG
QGS
QGD
Rg
tD(ON)
tR
tD(OFF)
tF
VGS=-4.5V, VDS=-10V, ID=-4.5A
3
VDD=-10V, ID≈-1.0A,
VGEN=-4.5V, RL=10Ω, RG=6Ω
7.3 15 nC
2.0 nC
1.9 nC
15 Ω
15 50 ns
32 60 ns
50 100 ns
45 80 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 1)
VSD IS=-1.7A, VGS=0V
-0.8 -1.2 V
Body Diode Reverse Recovery Time
tRR IF=-1.7A, di/dt=100A/µs
Notes: 1. Pulse test; pulse width ≤300μs, duty cycle ≤2%.
2. Guaranteed by design, not subject to production testing.
35 80 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-557.B
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UT3443 mosfet
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