1N50-KW 반도체 회로 부품 판매점
N-CHANNEL POWER MOSFET
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 Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* RDS(ON) < 10Ω @ VGS=10V, ID=0.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N50L-T92-B
1N50G-T92-B
1N50L-T92-K
1N50G-T92-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-92
TO-92
Pin Assignment
123
GDS
GDS
Packing
Tape Box
Bulk
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-053.b
1N50-KW
Preliminary
Power MOSFET
■ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 500 V
VGSS ±30 V
Continuous Drain Current
Avalanche Energy
Single Pulsed (Note 2)
ID
EAS
1A
50 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
Power Dissipation (TA=25°С)
PD 0.6 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°С
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 100mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
180
88
ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified)
UNIT
°С/W
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
Drain-Source Leakage Current
IDSS VDS=500V, VGS=0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID=1A, RG=25Ω,
VGS=10V (Note 2,3)
VDS=50V, VGS=10V, ID=1.3A
RG=3.3kΩ(Note 2, 3)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS =1A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
500 V
10 μA
100 nA
-100 nA
0.4 V/°С
3.0 5.5
8.6 10
V
Ω
135 pF
17 pF
4.7 pF
16.5 ns
30 ns
23 ns
30 ns
8 nC
2.0 nC
1.4 nC
1.4 V
1.0 A
4.0 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-053.b
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1N50-KW mosfet
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