SIZ918DT 반도체 회로 부품 판매점
Dual N-Channel 30V (D-S) MOSFET
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 Vishay |
New Product
SiZ918DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.)
Channel-1
0.0120 at VGS = 10 V
30
0.0145 at VGS = 4.5 V
Channel-2
0.0037 at VGS = 10 V
30
0.0045 at VGS = 4.5 V
ID (A)
16a
16a
28a
28a
Qg (Typ.)
6.8 nC
32 nC
FEATURES
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Notebook System Power
• POL
• Synchronous Buck Converter
PowerPAIR® 6 x 5
Pin 1
1
G2
8
7
S1/D2
Pin 9
S2
6
5
G1
D1
5 mm
2 D1
D1 3
D1
4
6 mm
Ordering Information: SiZ918DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
16a
16a
14.3b, c
11.4b, c
50
16a
3.4b, c
18
± 20
28a
28a
26a, b, c
21a, b, c
110
28a
4.3b, c
35
16 61
29 100
18 64
4.2b, c
5.2b, c
2.7b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
24 30 19 24
3.4 4.3
1 1.25
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2.
Document Number: 63783
For more information please contact: [email protected]
www.vishay.com
S12-0543 Rev. A, 12-Mar-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ918DT
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VDS/TJ
ID = 250 µA
ID = 250 µA
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = 250 µA
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = 250 µA
Gate Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 13.8 A
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 12.6 A
VGS = 4.5 V, ID = 20 A
VDS = 10 V, ID = 13.8 A
VDS = 10 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 10 V, ID = 13.8 A
Qg VDS = 15 V, VGS = 10 V, ID = 20 A
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 13.8 A
Qgs
Channel-2
Qgd VDS = 15 V, VGS = 4.5 V, ID = 20 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
f = 1 MHz
Min. Typ. Max. Unit
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
V
30
33
37
mV/°C
-5
- 7.5
1 2.2
V
1.2 2.2
± 100
± 100
nA
1
1
µA
5
5
20
A
20
0.0100 0.0120
0.0030 0.0037
0.0120 0.0145
0.0035 0.0045
47
S
116
Ch-1
790
Ch-2
3830
Ch-1
190
Ch-2
670
Ch-1
76
Ch-2
315
Ch-1
14 21
Ch-2
67.3 105
Ch-1
6.8 11
Ch-2
32 48
Ch-1
2.6
Ch-2
10.8
Ch-1
1.9
Ch-2
9.3
Ch-1 0.4
2
4
Ch-2 0.2 1.1 2.2
pF
nC
www.vishay.com
For more information please contact: [email protected]
Document Number: 63783
2 S12-0543 Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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