SIZ910DT 반도체 회로 부품 판매점
Dual N-Channel 30V (D-S) MOSFET
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 Vishay |
New Product
SiZ910DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.)
Channel-1
0.0058 at VGS = 10 V
30
0.0075 at VGS = 4.5 V
Channel-2
30 0.0030 at VGS = 10 V
0.0035 at VGS = 4.5 V
ID (A)
40a
40a
40a
40a
Qg (Typ.)
12.5 nC
29 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• POL
• Synchronous Buck Converter
PowerPAIR® 6 x 5
Pin 1
1
G2
8
7
S1/D2
Pin 9
S2
6
5
G1
D1
2
D1 3
5 mm
D1
D1
4
6 mm
Ordering Information: SiZ910DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
± 20
40a 40a
40a 40a
22b, c
17b, c
32b, c
26b, c
100
24a
3.8b, c
120
28a
4.3b, c
25 40
31 80
48 100
31 64
4.6b, c
3b, c
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
22 27 19 24
2.1 2.6
1 1.25
°C/W
Notes:
a. Package limited - TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.
Document Number: 63539
www.vishay.com
S11-2380-Rev. C, 28-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ910DT
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VDS/TJ
ID = 250 µA
ID = 250 µA
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = 250 µA
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = 250 µA
Gate Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 10 V, ID = 20 A
VDS = 10 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 10 V, ID = 20 A
Qg VDS = 15 V, VGS = 10 V, ID = 20 A
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Qgs
Channel-2
Qgd VDS = 15 V, VGS = 4.5 V, ID = 20 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
f = 1 MHz
Min. Typ. Max. Unit
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
V
30
33
31
- 5.4
mV/°C
- 6.1
1.2 2.2
V
1 2.2
± 100
± 100
nA
1
1
µA
5
5
20
A
25
0.0048 0.0058
0.0025 0.0030
0.0060 0.0075
0.0029 0.0035
94
S
140
Ch-1
1500
Ch-2
3600
Ch-1
285
Ch-2
660
Ch-1
125
Ch-2
305
Ch-1
26 40
Ch-2
60 110
Ch-1
12.5 19
Ch-2
29 51
Ch-1
4.7
Ch-2
10
Ch-1
4
Ch-2
9.5
Ch-1 0.5 2.6 5.2
Ch-2 0.1 0.6 1.2
pF
nC
www.vishay.com
Document Number: 63539
2 S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SIZ910DT mosfet
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