SIZ704DT 반도체 회로 부품 판매점
N-Channel 30V (D-S) MOSFET
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 Vishay |
New Product
N-Channel 30-V (D-S) MOSFETs
SiZ704DT
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.024 at VGS = 10 V
Channel-1 30
0.030 at VGS = 4.5 V
0.0135 at VGS = 10 V
Channel-2 30
0.017 at VGS = 4.5 V
ID (A)
12a
12a
16a
16a
Qg (Typ.)
3.8 nC
7.3 nC
Pin 1
PowerPAIR™ 6 x 3.7
G1 3.73 mm
1 D1
2
D1
D1
3
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
VIN/D1
• Notebook System Power
• POL
GHS •
1 VIN
2
VIN 3
Low Current DC/DC
GHS/G1
VIN N-Channel 1
MOSFET
VSW/S1/D2
G2
6 S2
5
S1/D2
S2
4
6.00 mm
GLS
6 GND
VSW
5 GND
4
GLS/G2
N-Channel 2
MOSFET
Ordering Information: SiZ704DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
GND/S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30 30
12a
12a
9.4b, c
7.5b, c
30
12a
3.1b, c
10
± 20
16a
16a
14b, c
11.2b, c
40
16a
3.7b, c
15
5 11
20 30
12.9 19
3.7b, c
4.5b, c
2.4b, c
2.9b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
26 34 21 28
4.7 6.2 3.2 4.2
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 72 °C/W for Channel-1 and 67 °C/W for Channel-2.
Document Number: 65367
S09-1921-Rev. A, 28-Sep-09
www.vishay.com
1
SiZ704DT
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 7.8 A
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 7 A
VGS = 4.5 V, ID = 7 A
VDS = 10 V, ID = 7.8 A
VDS = 10 V, ID = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 10 V, ID = 7.8 A
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 7.8 A
Qgs
Channel-2
Qgd VDS = 15 V, VGS = 4.5 V, ID = 10 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
f = 1 MHz
Min. Typ. Max. Unit
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
V
30
35
33
- 4.5
mV/°C
-5
1 2.5
V
1.2 2.5
± 100
± 100
nA
1
1
µA
5
5
20
A
20
0.020 0.024
0.0105 0.0135
0.024 0.030
Ω
0.0135 0.017
17
S
24
Ch-1
435
Ch-2
846
Ch-1
95
Ch-2
187
Ch-1
42
Ch-2
72
Ch-1
8 12
Ch-2
15.4 23
Ch-1
3.8 6
Ch-2
7.3 11
Ch-1
1.4
Ch-2
2.3
Ch-1
1.1
Ch-2
2.2
Ch-1 0.6 3.2 6.4
Ch-2 0.2 0.8 1.6
pF
nC
Ω
www.vishay.com
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Document Number: 65367
S09-1921-Rev. A, 28-Sep-09
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SIZ704DT mosfet
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