SISA14DN 반도체 회로 부품 판매점
N-Channel 30V (D-S) MOSFET
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 Vishay |
N-Channel 30 V (D-S) MOSFET
SiSA14DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
30 0.00510 at VGS = 10 V
0.00850 at VGS = 4.5 V
ID (A)f, g Qg (Typ.)
20 9.4 nC
PowerPAK® 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information:
SiSA14DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Gen IV Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Conversion
• Synchronous Rectification
• Synchronous Buck Converter
• DC/AC Inverter
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
Limit
30
+ 20, - 16
20g
20g
19.7a, b
10.4a, b
80
20g
3.2a, b
15
11.25
26.5
17
3.57a, b
2.3a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
28
3.8
Maximum
35
4.7
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 63252
For technical questions, contact: [email protected]
www.vishay.com
S12-3076-Rev. A, 24-Dec-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA14DN
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = + 20 V, - 16 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS 10 V, ID = 10 A
VGS 4.5 V, ID = 8 A
VDS = 10 V, VGS = 10 V
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 15 A
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Output Charge
Qoss
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Guaranteed by design.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
VDS = 15 V, VGS = 0 V to 4.5 V, ID = 15 A
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
TC = 25 °C
IS = 5 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1.1
30
0.4
Typ. Max. Unit
V
20
- 4.5
mV/°C
2.2 V
± 100 nA
1
µA
10
A
0.00425 0.00510
0.00680 0.00850
65 S
1450
445 pF
38
19.4 29
9.4 14
4 nC
1.8
12.5
1.65 3.3
9 18
8 16
18 36
8 16
ns
15 30
12 24
18 36
9 18
0.76
24
14
12
12
14.1
80
1.1
48
28
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: [email protected]
Document Number: 63252
2 S12-3076-Rev. A, 24-Dec-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SISA14DN mosfet
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