SIS862DN 반도체 회로 부품 판매점
N-Channel 60V (D-S) MOSFET
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 Vishay |
N-Channel 60 V (D-S) MOSFET
SiS862DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () (Max.)
0.0085 at VGS = 10 V
0.0105 at VGS = 6.0 V
0.0125 at VGS = 4.5 V
ID (A)f
40g
40g
40g
Qg (Typ.)
8.7 nC
PowerPAK® 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information:
SiS862DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Capable of Operating with 5 V Gate Drive
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary Side Switch
• Synchronous Rectification
• DC/DC Converters
• Boost Converters
• DC/AC Inverters
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 100 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
Limit
60
± 20
40g
40g
15.5a, b
12.5a, b
100
40g
3.1a, b
15
11.25
52
33
3.7a, b
2.4a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
26
1.9
33
°C/W
2.4
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 63346
For technical questions, contact: [email protected]
www.vishay.com
S13-1265-Rev. A, 27-May-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS862DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS 10 V, ID = 20 A
VGS 6 V, ID = 15 A
VGS 4.5 V, ID = 10 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 10 A
VDS = 30 V, VGS = 6 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Qoss
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (tp = 100 µs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 30 V, VGS = 4.5 V, ID = 10 A
VDS = 30 V, VGS = 0 V
f = 1 MHz
VDD = 30 V, RL = 3
ID 10 A, VGEN = 7.5 V, Rg = 1
VDD = 30 V, RL = 3
ID 10 A, VGEN = 10 V, Rg = 1
TC = 25 °C
IS = 5 A, VGS 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max. Unit
60 V
80
- 6.2
mV/°C
1.5 2.6 V
± 100 nA
1
µA
10
30 A
0.0070 0.0085
0.0085 0.0105
0.0100 0.0125
60 S
1320
545 pF
35
20.8 32
12.2 19
8.7 11
nC
4
2
25 38
0.2 0.6 1
12 24
5 10
20 40
5 10
ns
23 46
110 200
15 30
7 14
40
A
100
0.77 1.2
V
29 60 ns
20 40 nC
13.5
ns
15.5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: [email protected]
Document Number: 63346
2 S13-1265-Rev. A, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SIS862DN mosfet
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