NDDL1N60Z 반도체 회로 부품 판매점
N-Channel Power MOSFET / Transistor
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 ON Semiconductor |
NDDL1N60Z, NDTL1N60Z
Product Preview
N-Channel Power MOSFET
600 V, 15 W
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
CStoenatdinyuSoutasteD, rTaCin=C2u5rr°eCnt(NRoqtJeC 1)
Continuous Drain Current
Steady State, TC = 100°C
R(NqoJCte
1)
Pulsed Drain Current, tp = 10 ms
PStoewaedryDSitsastiep,aTtiCon=–2R5°qCJC
Gate−to−Source Voltage
Single Pulse Drain−to−Source
Avalanche Energy (IPK = 1.0 A)
Peak Diode Recovery (Note 2)
VDSS
ID
ID
IDM
PD
VGS
EAS
dv/dt
600
0.8 0.3
V
A
0.5 0.15 A
3.2 1.0
A
25 3 W
±30 V
60 mJ
4.5 V/ns
Source Current (Body Diode)
Lead Temperature for Soldering
Leads
IS
0.5 0.3
A
TL 260 °C
Operating Junction and Storage
Temperature
TJ, TSTG −55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. IS = 1.5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS
THERMAL RESISTANCE
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
NDDL1N60Z
Junction−to−Ambient (Note 4) NDDL1N60Z
(Note 3) NDDL1N60Z−1
(Note 4) NDTL1N60Z
(Note 5) NDTL1N60Z
RqJC
RqJA
5 °C/W
50 °C/W
96
62
151
3. Insertion mounted.
4. Surface−mounted on FR4 board using 1” sq. pad size
(Cu area = 1.127” sq. [2 oz] including traces).
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. P1
1
http://onsemi.com
V(BR)DSS
600 V
RDS(ON) MAX
15 W @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
MARKING DIAGRAMS
4
Drain
12
3
4 DPAK
CASE 369C
STYLE 2
2
1 Drain 3
4
IPAK
Gate 4 Source
Drain
CASE 369D
STYLE 2
1 23
Y = Year
WW = Work Week
G = Pb−Free Package
1 23
Gate Drain Source
1 23
A
Y
W
01N60
Drain
4 SOT−223
4
CASE 318E
STYLE 3
= Assembly Location
= Year
= Work Week
= Specific Device Code
AYW
L1N60ZG
G
12 3
Gate Drain Source
G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NDDL1N60Z/D
NDDL1N60Z, NDTL1N60Z
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 1 mA
Reference to 25°C, ID = 1 mA
Drain−to−Source Leakage Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
IDSS
IGSS
VDS = 600 V, VGS = 0 V
VGS = ±20 V
TJ = 25°C
TJ = 125°C
Gate Threshold Voltage
Negative Threshold Temperature Coef-
ficient
VGS(TH)
VGS(TH)/TJ
VDS = VGS, ID = 50 mA
Static Drain-to-Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCES
VGS = 10 V, ID = 0.2 A
VDS = 15 V, ID = 0.2 A
Input Capacitance (Note 7)
Output Capacitance (Note 7)
Reverse Transfer Capacitance (Note 7)
Total Gate Charge (Note 7)
Gate-to-Source Charge (Note 7)
Gate-to-Drain Charge (Note 7)
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS (Note 8)
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGP
Rg
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDS = 300 V, ID = 0.4 A, VGS = 10 V
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VDD = 300 V, ID = 0.4 A,
VGS = 10 V, RG = 0 W
Diode Forward Voltage
VSD
IS = 0.4 A, VGS = 0 V
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta VGS = 0 V, VDD = 30 V
tb IS = 0.8 A, di/dt = 100 A/ms
Reverse Recovery Charge
Qrr
6. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
7. Guaranteed by design.
8. Switching characteristics are independent of operating junction temperatures.
Min
600
3
Typ Max Unit
V
660 mV/°C
1
50
±100
mA
nA
3.75 4.5
V
7.0 mV/°C
13 15 W
0.5 S
94
18
3
5
1
3
6
TBD
pF
nC
V
W
6 ns
5
13
25
0.8 1.6 V
0.6
140 ns
25
115
220 nC
ORDERING INFORMATION
Device
Package
Shipping†
NDDL1N60Z−1G
IPAK
(Pb-Free, Halogen-Free)
75 Units / Rail
NDDL1N60ZT4G
DPAK
(Pb-Free, Halogen-Free)
2500 / Tape & Reel
NDTL1N60ZT1G
SOT−223
(Pb-Free, Halogen-Free)
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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( onsemi )
NDDL1N60Z mosfet
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