CPH6429 반도체 회로 부품 판매점
N-Channel Silicon MOSFET
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 ON Semiconductor |
CPH6429
Ordering number : ENN8081
CPH6429 N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1200mm2✕0.8mm)
Ratings
60
±10
2
8
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : ZF
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=1A, VGS=2.5V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
min
60
0.4
1.8
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
3.6 S
170 220 mΩ
190 270 mΩ
325 pF
29 pF
21 pF
11 ns
17 ns
40 ns
27 ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
CPH6429/D
CPH6429
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=4V, ID=2A
VDS=30V, VGS=4V, ID=2A
VDS=30V, VGS=4V, ID=2A
IS=2A, VGS=0
Ratings
min typ max
Unit
4.2 nC
1.1 nC
1.1 nC
0.86
1.2 V
Package Dimensions
unit : mm
2151A
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=30V
ID=1A
RL=30Ω
D VOUT
CPH6429
P.G 50Ω S
ID -- VDS
2.0
1.8
1.6
1.4
1.2
1.0 VGS=1.5V
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT06812
RDS(on) -- VGS
500
Ta=25°C
ID=1.0A
400
300
200
100
0
0 2 4 6 8 10
Gate-to-Source Voltage, VGS -- V IT06814
4.0
VDS=10V
3.5
ID -- VGS
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Gate-to-Source Voltage, VGS -- V IT06813
RDS(on) -- Ta
400
350
300
250
200
150
I D=I D1A=1, AV,GVS=G2S.=5V4.0V
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06815
Rev.0 I Page 2 of 4 I www.onsemi.com
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CPH6429 mosfet
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