FDS7098N3 반도체 회로 부품 판매점
30V N-Channel PowerTrench MOSFET
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 Fairchild Semiconductor |
May 2004
FDS7098N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 14 A, 30 V
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7098N3
FDS7098N3
13’’
2004 Fairchild Semiconductor Corporation
Ratings
30
±20
14
60
3.0
1.5
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
FDS7098N3 Rev C (W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
30
V
27 mV/°C
10
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 13 A
VGS = 10 V, ID = 14 A,TJ = 125°C
VDS = 10 V, ID = 14 A
1
1.9 3
V
–6 mV/°C
7.5 9 mΩ
9.5 12
11 14
62 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
1587
385
154
1.4
pF
pF
pF
Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
VGS = 5.0 V
ID = 14 A,
11 20
ns
13 23 ns
27 43
ns
15 27 ns
16 22 nC
5 nC
6 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
tRR Reverse Recovery Time
QRR Reverse Recovery Charge
IF = 14 A,
diF/dt = 100 A/µs
(Note 2)
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.5 A (Note 2)
2.5
16
26
0.7 1.2
A
ns
nC
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 40°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7098N3 Rev C (W)
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( fairchild )
FDS7098N3 mosfet
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