AON7788 반도체 회로 부품 판매점
30V N-Channel MOSFET
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 Alpha & Omega Semiconductors |
AON7788
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON7788 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
40A
< 4.5mΩ
< 5.3mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3_EP
Top View
Bottom View
Pin 1
Top View
18
27
36
4 5G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
40
31
150
20
16
35
61
36
14
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
2.8
Max
40
75
3.4
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Jan 2011
www.aosmd.com
Page 1 of 7
AON7788
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=125°C
0.5 mA
100
IGSS Gate-Body leakage current
VDS=0V, VGS= ±12V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2 1.6
2
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
150
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
3.7
5.5
4.5
6.6
mΩ
VGS=4.5V, ID=20A
4.2 5.3 mΩ
gFS Forward Transconductance
VDS=5V, ID=20A
115 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current G
0.4 0.7
40
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2730
240
140
0.6
3415
340
232
1.2
4100
440
325
1.8
pF
pF
pF
Ω
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
19 24 29 nC
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
6.6 nC
Qgd Gate Drain Charge
10 nC
tD(on)
Turn-On DelayTime
9 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.5
47
ns
ns
tf Turn-Off Fall Time
5.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
8 10 12 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
12 15 18 nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Jan 2011
www.aosmd.com
Page 2 of 7
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AON7788 mosfet
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