RP1L080SN 반도체 회로 부품 판매점
4V Drive Nch MOSFET
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 ROHM Semiconductor |
Data Sheet
4V Drive Nch MOSFET
RP1L080SN
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Application
Switching
Dimensions (Unit : mm)
MPT6
(Single)
(6) (5) (4)
(1) (2) (3)
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1L080SN
Taping
TR
1000
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
60
20
8.0
32
1.6
32
2.0
150
55to150
*1 Pw≤10s, Duty cycle≤1%
*2 Mounted on a ceramic board
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5) (4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗2
∗1
(1) (2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board
Symbol
Rth (ch-a)*
Limits
62.5
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
RP1L080SN
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
60
-
1.0
-
-
-
8.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
17
19
20
-
1700
330
170
18
25
70
30
40
5.0
9.0
Max.
10
-
1
3.0
24
27
28
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=8.0A, VGS=10V
m ID=8.0A, VGS=4.5V
ID=8.0A, VGS=4.0V
S ID=8.0A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=4.0A, VDD 30V
ns VGS=10V
ns RL=7.5
ns RG=10
nC VDD 30V
nC ID=8.0A,
nC VGS=10V
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2 V Is=8.0A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.08 - Rev.A
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RP1L080SN mosfet
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