Si6465DQ 반도체 회로 부품 판매점
P-Channel 1.8-V (G-S) MOSFET
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 Vishay |
P-Channel 1.8-V (G-S) MOSFET
Si6465DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.012 at VGS = - 4.5 V
- 8 0.017 at VGS = - 2.5 V
0.025 at VGS = - 1.8 V
ID (A)
± 8.8
± 7.4
± 6.0
FEATURES
• Halogen-free
• TrenchFET® Power MOSFETs: 1.8 V Rated
RoHS
COMPLIANT
S*
D1
S2
S3
G4
TSSOP-8
Si6465DQ
Top View
8D
7S
6S
5D
Ordering Information: Si6465DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G * Source Pins 2, 3, 6 and 7
must be tied common
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)a, b
IS
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
-8
±8
± 8.8
± 7.1
± 30
- 1.5
1.5
1.0
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
t ≤ 10 s
Steady State
Symbol
RthJA
Typical
90
Maximum
83
Unit
°C/W
Document Number: 70812
S-80682-Rev. D, 31-Mar-08
www.vishay.com
1
Si6465DQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = - 6.4 V, VGS = 0 V
VDS = - 6.4 V, VGS = 0 V, TJ = 70 °C
VDS ≥ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 8.8 A
VGS = - 2.5 V, ID = - 7.4 A
VGS = - 1.8 V, ID = - 6.0 A
VDS = - 5 V, ID = - 8.8 A
IS = - 1.5 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = - 6 V, VGS = - 4.5 V, ID = - 8.8 A
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
IF = - 1.5 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
- 0.45
- 20
0.009
0.0125
0.0185
34
- 0.65
± 100
-1
- 25
0.012
0.017
0.025
- 1.1
50 80
10
8
30 60
60 100
210 400
130 250
70 120
Unit
V
nA
µA
A
Ω
S
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70812
S-80682-Rev. D, 31-Mar-08
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Si6465DQ mosfet
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