NIC9N05ATS1 반도체 회로 부품 판매점
Protected Power MOSFET
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 ON Semiconductor |
NIC9N05TS1, NIC9N05ATS1
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Rating
Symbol Value
Unit
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage − Continuous
Operating and Storage Temperature Range
Electro−Static Discharge Capability (HBM)
(MM)
VDSS
VGS
TJ, Tstg
ESD
52−59
±15
−55 to 150
5000
500
V
V
°C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
Drain
(Pins 2, 4)
Gate
(Pin 1)
Overvoltage
RG Protection
ESD Protection
MPWR
Source
(Pin 3)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 1
1
Publication Order Number:
NIC9N05TS1/D
NIC9N05TS1, NIC9N05ATS1
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (Note 1)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)
V(BR)DSS
52
Zero Gate Voltage Drain Current
(VDS = 40 V, VGS = 0 V)
IDSS
Gate−Body Leakage Current
(VGS = ±8 V, VDS = 0 V)
(VGS = ±14 V, VDS = 0 V)
ON CHARACTERISTICS
IGSS
Gate Threshold Voltage
(VDS = VGS, ID = 100 mA)
VGS(th)
1.3
Static Drain−to−Source On−Resistance
(VGS = 3.5 V, ID = 0.6 A)
(VGS = 4.0 V, ID = 1.5 A)
(VGS = 10 V, ID = 2.6 A)
SOURCE−DRAIN DIODE CHARACTERISTICS
RDS(on)
Forward On−Voltage
IS = 2.6 A, VGS = 0 V
IS = 2.6 A, VGS = 0 V, TJ = 125°C
VSD
1. Wafers tested prior to sawing.
Typ
55
±22
1.75
190
165
107
0.81
0.66
Max
59
10
±10
2.5
380
200
125
1.5
Unit
V
mA
mA
V
mW
V
ORDERING INFORMATION
Device
NIC9N05TS1
NIC9N05ATS1
Shipping
5000 / Reel
5000 / Reel
http://onsemi.com
2
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제조업체: ON Semiconductor
( onsemi )
NIC9N05ATS1 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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