RSH070P05 반도체 회로 부품 판매점
4V Drive Pch MOSFET
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 ROHM Semiconductor |
4V Drive Pch MOSFET
RSH070P05
Structure
Silicon P-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter, Inverter
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH070P05
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Chanel temperature
Range of Storage temperature
*1 PW10ｓ、Duty cycle1
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
-45
±20
±7.0
*1 ±28
-1.6
*1 -28
*2 2
150
-55 to +150
*2 Mounted on a ceramic board
Unit
V
V
A
A
A
A
W
oC
oC
Thermal resistance
Parameter
Chanel to ambient
* Mounted on a ceramic board
Symbol
Rth(ch-a) *
Limits
62.5
Unit
oC/W
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8) (7)
(6)
(5)
∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A
RSH070P05
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −45 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS= −45V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS (on)∗
−
−
−
19 27 mΩ ID= −7A, VGS= −10V
25 35 mΩ ID= −7A, VGS= −4.5V
28 39 mΩ ID= −7A, VGS= −4.0V
Forward transfer admittance Yfs ∗ 10.0 − − S VDS= −10V, ID= −7A
Input capacitance
Ciss
− 4100 −
pF VDS= −10V
Output capacitance
Coss − 510 − pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
−
−
−
−
−
−
−
−
330 −
31 −
35 −
135 −
50 −
34.0 47.6
9.5 −
12 −
pF f=1MHz
ns VDD −25V
ns ID= −3.5A
VGS= −10V
ns RL=−7Ω
ns RG=10Ω
nC VDD −25V VGS= −5V
nC ID= −7A
nC RL=3.5Ω RG=10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD ∗
−
− −1.2 V
∗Pulsed
Conditions
IS= −7A, VGS=0V
Data Sheet
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.12 - Rev.A
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RSH070P05 mosfet
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