CMP100N04 반도체 회로 부품 판매점
N-Ch 40V Fast Switching MOSFETs
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 Cmos |
CMP100N04/CMB100N04/CMI100N04
N-Ch 40V Fast Switching MOSFETs
General Description
The100N04 is N-ch MOSFETs
with extreme high cell density ,
which provide excellent RDSON
and gate charge for most of the
synchronous buck converter
applications.
Features
Simple Drive Requirement
Fast Switching
Low On-Resistance
Product Summery
BVDSS
40V
RDSON
< 3.8m
ID
100A
Applications
HIGH CURRENT, HIGH SPEED SWITCHING
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
SOLENOID AND RELAY DRIVERS
AUTOMOTIVE ENVIRONMENT
TO220 / TO263 /TO-262 Pin Configuration
Absolute Maximum Ratings
G
DS
TO-220
(CMP100N04)
GD S
TO-263
(CMB100N04)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
G DS
TO-262
(CMI100N04)
Rating
40
20
100
56
320
480
56
260
-65 to 175
-65 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient1
Thermal Resistance Junction-case
Typ.
---
---
Max.
62.5
0.7
Unit
/W
/W
1
CMP100N04/CMB100N04/CMI100N04
N-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=1mA
VGS=10V , ID=40A
VGS=4.5V , ID=40A
VGS=VDS , ID =250uA
Min.
40
---
---
---
1
Typ.
---
0.035
3.4
4.2
---
Max.
---
---
3.8
5.2
3
Unit
V
V/
m
V
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=30V , VGS=0V
VDS=30V , VGS=0V ,TC=125
VGS 20V , VDS=0V
VDS>ID(on) X RDS(on )max , ID=15A
VDS=0V , VGS=0V , f=1MHz
ID = 100A
VDD =24V
VGS =4.5V
V DD =15V
ID=40A
R G=4.7
VGS=4.5V
VDS=25V , VGS=0V , f=1MHz
--- ---
--- ---
1 uA
10
--- --- 100 nA
--- 50 ---
S
--- ---
4.7
--- 84 114
--- 21 --- nC
--- 36
---
--- 40
---
--- 112
--- 144
---
---
ns
--- 85
---
--- --- 5600
--- --- 1300 pF
--- ---
490
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1
Pulsed Source Current2
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=100A , TJ=25
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=56A
Min.
---
---
---
Typ.
---
---
---
Max.
100
320
1.5
Unit
A
A
V
2
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CMP100N04 mosfet
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국내 전력반도체 판매점
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
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N-Ch 40V Fast Switching MOSFETs - Cmos