Si7190DP 반도체 회로 부품 판매점
N-Channel 250-V (D-S) MOSFET
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N-Channel 250-V (D-S) MOSFET
Si7190DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
250 0.118 at VGS = 10 V
0.124 at VGS = 6 V
PowerPAK SO-8
ID (A)g
18.4
18.0
Qg (Typ.)
32
6.15 mm
S
1S
5.15 mm
2
S
3
G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7190DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK® Package
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
• Industrial
• POL
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
250
± 20
18.4
14.7
4.4b, c
3.5b, c
30
30a
4.5b, c
7
2.4
96
61.5
5.4b, c
3.5b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
18
1.0
23
°C/W
1.3
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
g. Based on TC = 25 °C.
Document Number: 68985
S09-0997-Rev. B, 01-Jun-09
www.vishay.com
1
Si7190DP
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 1 mA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
VDS = 250 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 4.4 A
VGS = 6 V, ID = 4.3 A
Forward Transconductancea
gfs VDS = 15 V, ID = 4.4 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 125 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 125 V, VGS = 10 V, ID = 4.4 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 125 V, VGS = 6 V, ID = 4.4 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 125 V, RL = 35.7 Ω
ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 125 V, RL = 35.7 Ω
ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 3.5 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
250
2
20
0.2
Typ.
Max.
Unit
258
- 9.8
0.098
0.103
19
4
± 100
1
10
0.118
0.124
V
mV/°C
V
nA
µA
A
Ω
S
2214
96
50
48
32
12
15
0.9
21
14
24
10
13
12
28
9
0.8
87
300
62
25
72
48
1.8
32
21
36
20
20
18
42
18
30
30
1.2
131
450
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68985
S09-0997-Rev. B, 01-Jun-09
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Si7190DP mosfet
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