NVB6412AN 반도체 회로 부품 판매점
N-Channel Power MOSFET / Transistor
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 ON Semiconductor |
NTB6412AN, NTP6412AN,
NVB6412AN
N-Channel Power MOSFET
100 V, 58 A, 18.2 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain Cur-
rent RqJC
Power Dissipation
RqJC
Steady
State
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Range
VDSS
VGS
ID
PD
IDM
TJ, Tstg
100
$20
58
41
167
240
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 44.7 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS 58
EAS 300
TL 260
Unit
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
0.9 °C/W
Junction−to−Ambient (Note 1)
RqJA
33
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 2
1
www.onsemi.com
V(BR)DSS
100 V
RDS(ON) MAX
18.2 mW @ 10 V
ID MAX
(Note 1)
58 A
N−Channel
D
G
S
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
12
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
6412ANG
AYWW
1
Gate
3
Source
NTB
6412ANG
AYWW
1
Gate
23
Drain Source
2
Drain
6412AN = Specific Device Code
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB6412AN/D
NTB6412AN, NTP6412AN, NVB6412AN
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
100
103
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 100 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = $20 V
1.0
100
$100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(th)
VGS(th)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 58 A
VGS = 10 V, ID = 20 A
VDS = 5 V, ID = 20 A
2.0 4.0 V
9.2 mV/°C
16.8 18.2 mW
15.6 18.2
31 S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
Gate Resistance
RG
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VGS = 10 V, VDS = 80 V,
ID = 58 A
VGS = 10 V, VDD = 80 V,
ID = 58 A, RG = 6.2 W
2700
400
150
73
2.5
13.5
35
5.6
2.2
3500
500
100
pF
nC
V
W
16 ns
140
70
126
Forward Diode Voltage
VSD TJ = 25°C
IS = 58 A
TJ = 125°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta VGS = 0 V, IS = 58 A,
tb dISD/dt = 100 A/ms
Reverse Recovery Charge
QRR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
0.96 1.3
0.89
85
60
25
270
V
ns
nC
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NVB6412AN mosfet
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