AUIRLR3915 반도체 회로 부품 판매점
HEXFET Power MOSFET
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 International Rectifier |
AUTOMOTIVE GRADE
PD - 97743
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
AUIRLR3915
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ.
max
ID (Silicon Limited)
S ID (Package Limited)
55V
12m
14m
61A
30A
G
Gate
D
S
G
D-Pak
AUIRLR3915
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
61
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
43 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
cIDM Pulsed Drain Current
30
240
PD @TC = 25°C Power Dissipation
Linear Derating Factor
120
0.77
W
W/°C
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
cRepetitive Avalanche Energy
± 16
200
600
See Fig. 12a, 12b, 15, 16
V
mJ
A
mJ
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
300
°C
Parameter
kRJC
Junction-to-Case
jRJA Junction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.3
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/29/11
AUIRLR3915
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.057 –––
––– 12 14
––– 14 17
V/°C Reference to 25°C, ID = 1mA
ffm
VGS = 10V, ID = 30A
VGS = 5.0V, ID = 26A
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
1.0 ––– 3.0
42 ––– –––
––– ––– 20
fV VDS = VGS, ID = 250μA
S VDS = 25V, ID = 30A
μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 61 92
ID = 30A
Qgs Gate-to-Source Charge
––– 9.0 14 nC VDS = 44V
fQgd
Gate-to-Drain ("Miller") Charge
––– 17 25
VGS = 10V
td(on)
Turn-On Delay Time
––– 7.4 –––
VDD = 28V
tr Rise Time
––– 51 –––
ID = 30A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 83 –––
––– 100 –––
ns RG = 8.5
fVGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss
Coss eff.
gOutput Capacitance
Effective Output Capacitance
Diode Characteristics
––– 1870 –––
––– 390 –––
––– 74 –––
––– 2380 –––
––– 290 –––
––– 540 –––
and center of die contact
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 61
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 240
A showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 30A, VGS = 0V
f––– 62 93 ns TJ = 25°C, IF = 30A, VDD = 25V
––– 110 170 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L = 0.45mH, RG = 25, IAS = 30A, VGS =10V.
Part not recommended for use above this
value.
ISD 30A, di/dt 280A/μs, VDD V(BR)DSS,
TJ 175°C.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population, starting
TJ = 25°C, L = 0.45mH, RG = 25, IAS = 30A, VGS =10V.
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
R is measured at TJ of approximately 90°C.
2 www.irf.com
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( ir )
AUIRLR3915 mosfet
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