FQD3N60C 반도체 회로 부품 판매점
600V N-Channel MOSFET
|
|
 Fairchild Semiconductor |
FQD3N60C
600V N-Channel MOSFET
Features
• 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V
• Low gate charge ( typical 10.5 nC)
• Low Crss ( typical 5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
January 2006
QFET TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
GS
D-PAK
FQD Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA*
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
{D
z
G{
z
z
{S
FQD3N60C
600
2.4
1.5
9.6
±30
150
2.4
5.0
4.5
50
0.4
-55 to +150
300
Typ.
--
--
--
Max.
2.5
50
110
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQD3N60C REV. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FQD3N60C
FQD3N60C
Device
FQD3N60CTM
FQD3N60CTF
Package
D-PAK
D-PAK
Reel Size
380mm
380mm
Tape Width
16mm
16mm
Quantity
2500
2000
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
600
--
--
--
--
--
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.2A
VDS = 40V, ID = 1.2A
2.0
--
(Note 4)
--
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
VDD = 300V, ID = 3A
RG = 25Ω
VDS = 480V, ID = 3A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.4A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 3A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
Typ.
--
0.6
--
--
--
--
--
2.8
3.5
435
45
5
12
30
35
35
10.5
2.1
4.5
--
--
--
260
1.6
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
3.4 Ω
-- S
565 pF
60 pF
8 pF
34 ns
70 ns
80 ns
80 ns
14 nC
-- nC
-- nC
3A
12 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 2.4A, VDD = 50V, L=47mH, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
600V N-Channel MOSFET REV. A
2
www.fairchildsemi.com
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: Fairchild Semiconductor
( fairchild )
FQD3N60C mosfet
데이터시트 다운로드 :
[ FQD3N60C.PDF ]
[ FQD3N60C 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
FQD3N60
600V N-Channel MOSFET - Fairchild Semiconductor
FQD3N60C
600V N-Channel MOSFET - Fairchild Semiconductor