FS40SM-6 반도체 회로 부품 판매점
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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 Mitsubishi Electric Semiconductor |
FS40SM-6
MITSUBISHI Nch POWER MOSFET
FS40SM-6
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9MAX.
r
φ 3.2
Dimensions in mm
4.5
1.5
2
1.0
q we
5.45
5.45
4.4
0.6 2.8
4
wr
¡VDSS ................................................................................ 300V
¡rDS (ON) (MAX) ............................................................ 0.114Ω
¡ID .......................................................................................... 40A
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-3P
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
300
±30
40
120
275
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS40SM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 300V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 20A, VGS = 10V
ID = 20A, VGS = 10V
ID = 20A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 20A, VGS = 10V, RGEN = RGS = 50Ω
IS = 20A, VGS = 0V
Channel to case
Min.
300
±30
—
—
2
—
—
12.0
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
3
0.088
1.76
18.0
2850
580
110
45
125
310
140
1.5
—
Max.
—
—
±10
1
4
0.114
2.28
—
—
—
—
—
—
—
—
2.0
0.45
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
300
250
200
150
100
50
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
50 10V
7V
40
PD =
275W
TC = 25°C
Pulse Test
6V
30
20
5V
10
4V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
3
2
102 tw=10µs
7
5
3 100µs
2
101 1ms
7
5
3
2
100 TC = 25°C
7 Single Pulse
5
10ms
100ms
DC
3
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS=20V
20 10V
6V
PD = 275W
16 5V
12
TC = 25°C
Pulse Test
8 4.5V
4
4V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Mitsubishi Electric Semiconductor
( mitsubishi )
FS40SM-6 mosfet
데이터시트 다운로드 :
[ FS40SM-6.PDF ]
[ FS40SM-6 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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