FS30VSJ-06 반도체 회로 부품 판매점
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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 Mitsubishi Electric Semiconductor |
FS30VSJ-06
MITSUBISHI Nch POWER MOSFET
FS30VSJ-06
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
r 10.5MAX.
Dimensions in mm
4.5
1.3
0
+0.3
–0
1
B5 0.5
0.8
¡4V DRIVE
¡VDSS ................................................................................. 60V
¡rDS (ON) (MAX) ............................................................. 30mΩ
¡ID ........................................................................................ 30A
¡Integrated Fast Recovery Diode (TYP.) ............ 60ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
qwe
wr
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-220S
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 100µH
Typical value
Conditions
Ratings
60
±20
30
120
30
30
120
45
–55 ~ +150
–55 ~ +150
1.2
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VSJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
ID = 15A, VGS = 4V
ID = 15A, VGS = 10V
ID = 15A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
IS = 15A, VGS = 0V
Channel to case
IS = 30A, dis/dt = –100A/µs
Limits
Min. Typ. Max.
60 — —
— — ±0.1
— — 0.1
1.0 1.5 2.0
— 25 30
— 31 38
— 0.38 0.45
— 28 —
— 1800 —
— 340 —
— 180 —
— 17 —
— 46 —
— 120 —
— 95 —
— 1.0 1.5
— — 2.77
— 60 —
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0 50 100 150 200
MAXIMUM SAFE OPERATING AREA
3
2
102
7
5 tw = 10ms
3
2
101
7
5
3
2
100
7
5
3
3
TC = 25°C
Single Pulse
5 7 100 2 3
5 7 101 2 3
100ms
1ms
10ms
DC
5 7 102 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 10V 5V 4V
50
TC = 25°C
Pulse Test
40
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 10V5V
20
4V 3V
TC = 25°C
Pulse Test
16
30
3V
20
PD = 45W
10
2V
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
12
2.5V
8
4
2V
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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제조업체: Mitsubishi Electric Semiconductor
( mitsubishi )
FS30VSJ-06 mosfet
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[ FS30VSJ-06.PDF ]
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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