FS2UM-18A 반도체 회로 부품 판매점
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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 Powerex Power Semiconductors |
FS2UM-18A
MITSUBISHI Nch POWER MOSFET
FS2UM-18A
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10.5MAX.
r
Dimensions in mm
4.5
1.3
¡VDSS ................................................................................ 900V
¡rDS (ON) (MAX) ................................................................ 7.3Ω
¡ID ............................................................................................ 2A
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
φ 3.6
1.0
0.8
2.54 2.54 0.5 2.6
qwe
wr
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-220
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
900
±30
2
6
85
–55 ~ +150
–55 ~ +150
2
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2UM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 900V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 1A, VGS = 0V
Channel to case
Limits
Unit
Min. Typ. Max.
900 —
—V
±30 —
—V
— — ±10 µA
——
1 mA
2 3 4V
—
5.62
7.30
Ω
—
5.62 7.30
V
1.2 2.0 — S
— 460 — pF
— 45 — pF
— 8 — pF
— 11 — ns
— 13 — ns
— 55 — ns
— 22 — ns
— 1.0 1.5 V
— — 1.47 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
5.0
PD = 85W
4.0
VGS = 20V
10V
5V
3.0
MAXIMUM SAFE OPERATING AREA
101
7
5 tw = 10ms
3
2 100ms
100
7
5 1ms
3
2 10ms
10–1
7
5
100ms
DC
3 TC = 25°C
2 Single Pulse
10–2
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
TC = 25°C
Pulse Test
VGS = 20V 1@0V
5V
1.6
4.5V
1.2
2.0
1.0
TC = 25°C
Pulse Test
0 4V
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
0.8
0.4 4V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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FS2UM-18A mosfet
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관련 데이터시트
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Nch POWER MOSFET HIGH-SPEED SWITCHING USE - Mitsubishi Electric Semiconductor
FS2UM-18A
Nch POWER MOSFET HIGH-SPEED SWITCHING USE - Powerex Power Semiconductors