FS20VS-5 반도체 회로 부품 판매점
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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 Mitsubishi Electric Semiconductor |
FS3VS-9
MITSUBISHI Nch POWER MOSFET
FS3VS-9
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
r 10.5MAX.
Dimensions in mm
4.5
1.3
1
5
0.8
0
+0.3
–0
0.5
¡VDSS ................................................................................ 450V
¡rDS (ON) (MAX) ................................................................. 3.5Ω
¡ID ............................................................................................ 3A
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
qwe
wr
q GATE
q w DRAIN
e SOURCE
r DRAIN
e
TO-220S
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
450
±30
3
9
60
–55 ~ +150
–55 ~ +150
1.2
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3VS-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1A, VGS = 0V
Channel to case
Limits
Unit
Min. Typ. Max.
450 —
—V
±30 —
—V
— — ±10 µA
——
1 mA
2 3 4V
— 2.7 3.5 Ω
— 2.7 3.5 V
1.0 1.5 — S
— 300 — pF
— 35 — pF
— 6 — pF
— 13 — ns
— 10 — ns
— 30 — ns
— 30 — ns
— 1.5 2.0 V
— — 2.08 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
PD = 60W
8
TC = 25°C
Pulse Test
6
VGS=20V
4
10V
8V
6V
2
5V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
101
7
5
tw=10µs
3
2 100µs
100
7
5
3
2
10–1
7
5
3
2
TC = 25°C
Single Pulse
1ms
10ms
DC
10–2
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
5
TC = 25°C
Pulse Test
4
PD=60W
VGS=20V
10V
8V
3
6V
2
1
5V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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제조업체: Mitsubishi Electric Semiconductor
( mitsubishi )
FS20VS-5 mosfet
데이터시트 다운로드 :
[ FS20VS-5.PDF ]
[ FS20VS-5 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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