DMN3016LFDE 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE MOSFET
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 Diodes |
DMN3016LFDE
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(ON) max
12mΩ @ VGS = 10V
16mΩ @ VGS = 4.5V
ID max
TA = +25°C
10A
8.5A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Battery Management Application
Power Management Functions
DC-DC Converters
Features and Benefits
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low Gate Threshold Voltage
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
U-DFN2020-6
Type E
D
Bottom View
6D D1
5D D2
4S S G3
Pin Out
G
S
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN3016LFDE-7
DMN3016LFDE-13
Case
U-DFN2020-6 Type E
U-DFN2020-6 Type E
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
NR = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
September 2013
© Diodes Incorporated
DMN3016LFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAR
EAR
Value
30
±20
10
8
12
9
2.5
90
22
24
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Steady state
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
0.73
0.47
171
121
2.02
1.30
62
42
9.3
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
IDSS
IGSS
30
-
-
--
-1
- ±100
VGS(th)
RDS (ON)
|Yfs|
VSD
1.4
-
-
-
-
-
8
12
32
0.70
2.0
12
16
-
1.0
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
- 1415 -
- 119 -
- 82 -
- 2.6 3.2
- 11.3 -
- 25.1 -
- 3.5 -
- 3.6 -
- 4.8 -
- 16.5 -
- 26.1 -
- 5.6 -
- 12.3 -
- 10.4 -
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
2 of 6
www.diodes.com
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ
VGS = 10V, ID = 11A
VGS = 4.5V, ID = 9A
S VDS = 5V, ID = 12A
V VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = 15V, ID = 12A
ns
VDD = 15V, VGS = 10V,
RL = 1.25Ω, RG = 3Ω,
ns
nC
IF = 12A, di/dt = 500A/μs
September 2013
© Diodes Incorporated
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