JHW5N50V 반도체 회로 부품 판매점
N-CHANNEL MOSFET
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 Jin-ec Electronic |
Shanghai Jin-ec Electronic&Technology Co., Ltd
N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
JHW5N50封装 Package
主要参数 MAIN CHARACTERISTICS
ID 5 A
VDSS 500 V
Rdson（@Vgs=10V） 1. Ω
Qg 32 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 17pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 17pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
1/10
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
项目
Parameter
最高漏极－源极直流电压
Drain-Source Voltage
连续漏极电流
Drain Current -continuous
符号
Symbol
数值
Value
JHW5N50
VDSS
500
ID
T=25℃
T=100℃
5
2.9
最大脉冲漏极电流（注 1）
Drain Current - pulse
（note
1）
IDM
18
最高栅源电压
Gate-Source Voltage
VGSS
±30
单脉冲雪崩能量（注 2）
Single Pulsed Avalanche Energy
（note 2）
EAS
270
雪崩电流（注 1）
Avalanche Current（note 1）
IAR
5
重复雪崩能量（注 1）
Repetitive Avalanche Current
（note 1）
EAR
7.3
二极管反向恢复最大电压变化速
率（注 3）
Peak Diode Recovery dv/dt（note
3）
耗散功率
Power Dissipation
最高结温及存储温度
Operating and Storage
Temperature Range
dv/dt
PD
TC=25℃
-Derate
above
25℃
TJ，TSTG
59
0.48
5.5
73
0.58
-55～+150
引线最高焊接温度
Maximum Lead Temperature for
Soldering Purposes
TL
300
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
JHW5N50
单
位
Unit
V
5* A
2.9* A
18* A
V
mJ
A
mJ
V/ns
38 W
0.3 W/℃
℃
℃
2/10
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( jin-ec )
JHW5N50V mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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